IRFZ40
IRFZ40FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
■ TYPICAL R
DS(on)
= 0.022 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMPERATURE
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
IRFZ40
IRFZ40FI
50 V
50 V
< 0.028 Ω
< 0.028 Ω
50 A
27 A
1
2
3
TO-220 ISOWATT220
July 1993
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRFZ40 IRFZ40FI
V
DS
Drain-source Voltage (V
GS
=0) 50 50 V
V
DGR
Drain- gate Voltage (R
GS
=20kΩ)5050V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (cont.) at T
c
=25
o
C5027A
I
D
Drain Current (cont.) at T
c
=100
o
C3519A
I
DM
(•) Drain Current (pulsed) 200 200 A
P
tot
Total Dissipation at T
c
=25
o
C 150 45 W
Derating Factor 1 0.3 W/
o
C
V
ISO
Insulation Withstand Voltage (DC) 2000 V
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(•) Pulse width limited by safe operating area
1
2
3
1/9
