IRFR/U3910
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.115 V
GS
= 10V, I
D
= 10A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 6.4 ––– ––– S V
DS
= 50V, I
D
= 9.0A
––– ––– 25
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 44 I
D
= 9.0A
Q
gs
Gate-to-Source Charge ––– ––– 6.2 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 21 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 6.4 ––– V
DD
= 50V
t
r
Rise Time ––– 27 –––
ns
I
D
= 9.0A
t
d(off)
Turn-Off Delay Time ––– 37 ––– R
G
= 12Ω
t
f
Fall Time ––– 25 ––– R
D
= 5.5Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 640 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 160 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance ––– 7.5 –––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance ––– 4.5 –––
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 130 190 ns T
J
= 25°C, I
F
= 9.0A
Q
rr
Reverse RecoveryCharge ––– 650 970 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
16
60
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 3.1mH
R
G
= 25Ω, I
AS
= 9.0A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
I
SD
≤ 9.0A, di/dt ≤ 520A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Uses IRF530N data and test conditions
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Pulse width ≤ 300µs; duty cycle ≤ 2%
