AUIRFR2405
HEXFET
®
Power MOSFET
08/30/11
www.irf.com 1
PD - 97688A
AUTOMOTIVE GRADE
S
D
G
GDS
Gate Drain Source
D-Pak
AUIRFR2405
G
S
D
Features
l Advanced Planar Technology
● Dynamic dV/dT Rating
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
dv/dt
Peak Diode Recovery dv/dt
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.4
R
θJA
Junction-to-Ambient (PCB Mount) ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
5.0
11
130
34
110
0.71
± 20
Max.
56
40
220
30
-55 to + 175
300
V
(BR)DSS
55V
R
DS(on)
typ.
11.8m
Ω
max
16m
I
D (Silicon Limited)
56A
I
D (Package Limited)
30A
