1/9July 2001
IRF634
IRF634FP
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP
MESH OVERLAY™ MOSFET
■ TYPICAL R
DS
(on) = 0.38 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
■ IDEAL FOR MONITOR’s B+ FUNCTION
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
IRF634
IRF634FP
250 V
250 V
< 0.45 Ω
< 0.45 Ω
8 A
8 A
Symbol Parameter Value Unit
IRF634 IRF634FP
V
DS
Drain-source Voltage (V
GS
= 0)
250 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ)
250 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuos) at T
C
= 25°C
8 8(*) A
I
D
Drain Current (continuos) at T
C
= 100°C
5 5(*) A
I
DM
(●)
Drain Current (pulsed) 32 32(*) A
P
TOT
Total Dissipation at T
C
= 25°C
80 30 W
Derating Factor 0.64 0.24 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2000 V
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
(1) I
SD
≤ 8A, di/dt≤300 A/µs, V
DD
≤ V
(BR)DSS
, Tj≤T
jMAX
(*)Limited only by maximum temperature allowed
INTERNAL SCHEMATIC DIAGRAM
TO-220
1
2
3
1
2
3
TO-220FP
