Semiconductor Group
6 Mar-29-1996
BSM 200 GB 120 DN2
Typ. gate charge
V
GE
=
ƒ
(
Q
Gate
)
parameter:
I
C puls
= 200 A
0 200 400 600 800 1000 nC 1400
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V600 V
Typ. capacitances
C
=
f
(
V
CE
)
parameter:
V
GE
= 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
V
CE
-1
10
0
10
1
10
2
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
T
j
= 150°C
parameter:
V
GE
= 15 V
0 200 400 600 800 1000 1200 V 1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/
I
C
Short circuit safe operating area
I
Csc
= f(V
CE
) ,
T
j
= 150°C
parameter:
V
GE
= ± 15 V,
t
SC
≤
10 µs, L < 25 nH
0 200 400 600 800 1000 1200 V 1600
V
CE
0
2
4
6
8
12
I
Csc
/
I
C
