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BSM200GB120DN2

Part #	BSM200GB120DN2
Description	Trans IGBT Module N-CH 1.2KV290A 7-Pin 62MM - OTH
Category	MODULE
Availability	In Stock
Qty	1

Qty	Price
1 +	$265.27176

Manufacturer	Available	Qty
EUPEC Date Code: 20	Freelance Stock: 1 Ships Immediately

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Technical Document

DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Semiconductor Group

1 Mar-29-1996

BSM 200 GB 120 DN2

IGBT Power Module

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

V

CE

I

C

Package Ordering Code

BSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70

Maximum Ratings

Parameter

Symbol Values Unit

Collector-emitter voltage

V

CE

1200 V

Collector-gate voltage

R

GE

= 20 k

Ω

V

CGR

1200

Gate-emitter voltage

V

GE

± 20

DC collector current

T

C

= 25 °C

T

C

= 80 °C

I

C

200

290

A

Pulsed collector current,

t

p

= 1 ms

T

C

= 25 °C

T

C

= 80 °C

I

Cpuls

400

580

Power dissipation per IGBT

T

C

= 25 °C

P

tot

1400

W

Chip temperature

T

j

+ 150 °C

Storage temperature

T

stg

-55 ... + 150

Thermal resistance, chip case

R

thJC

≤

0.09

K/W

Diode thermal resistance, chip case

R

thJCD

≤

0.18

Insulation test voltage,

t

= 1min.

V

is

2500 Vac

Creepage distance - 20 mm

Clearance - 11

DIN humidity category, DIN 40 040 - F -

IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group

2 Mar-29-1996

BSM 200 GB 120 DN2

Electrical Characteristics

, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

V

GE

=

V

CE,

I

C

= 8 mA

V

GE(th)

4.5 5.5 6.5

V

Collector-emitter saturation voltage

V

GE

= 15 V,

I

C

= 200 A,

T

j

= 25 °C

V

GE

= 15 V,

I

C

= 200 A,

T

j

= 125 °C

V

CE(sat)

-

-

3.1

2.5

3.7

3

Zero gate voltage collector current

V

CE

= 1200 V,

V

GE

= 0 V,

T

j

= 25 °C

V

CE

= 1200 V,

V

GE

= 0 V,

T

j

= 125 °C

I

CES

-

-

12

3

-

4

mA

Gate-emitter leakage current

V

GE

= 20 V,

V

CE

= 0 V

I

GES

- - 400

nA

AC Characteristics

Transconductance

V

CE

= 20 V,

I

C

= 200 A

g

fs

108 - -

S

Input capacitance

V

CE

= 25 V,

V

GE

= 0 V,

f

= 1 MHz

C

iss

- 13 -

nF

Output capacitance

V

CE

= 25 V,

V

GE

= 0 V,

f

= 1 MHz

C

oss

- 2 -

Reverse transfer capacitance

V

CE

= 25 V,

V

GE

= 0 V,

f

= 1 MHz

C

rss

- 1 -

Semiconductor Group

3 Mar-29-1996

BSM 200 GB 120 DN2

Electrical Characteristics

, at T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at

T

j

= 125 °C

Turn-on delay time

V

CC

= 600 V,

V

GE

= 15 V,

I

C

= 200 A

R

Gon

= 4.7

Ω

t

d(on)

- 110 220

ns

Rise time

V

CC

= 600 V,

V

GE

= 15 V,

I

C

= 200 A

R

Gon

= 4.7

Ω

t

r

- 80 160

Turn-off delay time

V

CC

= 600 V,

V

GE

= -15 V,

I

C

= 200 A

R

Goff

= 4.7

Ω

t

d(off)

- 550 800

Fall time

V

CC

= 600 V,

V

GE

= -15 V,

I

C

= 200 A

R

Goff

= 4.7

Ω

t

f

- 80 120

Free-Wheel Diode

Diode forward voltage

I

F

= 200 A,

V

GE

= 0 V,

T

j

= 25 °C

I

F

= 200 A,

V

GE

= 0 V,

T

j

= 125 °C

V

F

-

-

1.8

2.3

-

2.8

V

Reverse recovery time

I

F

= 200 A,

V

R

= -600 V,

V

GE

= 0 V

d

i

F

/

dt

= -2000 A/µs,

T

j

= 125 °C

t

rr

- 0.5 -

µs

Reverse recovery charge

I

F

= 200 A,

V

R

= -600 V,

V

GE

= 0 V

d

i

F

/

dt

= -2000 A/µs

T

j

= 25 °C

T

j

= 125 °C

Q

rr

-

-

36

12

-

-

µC

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