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MS1001

Part # MS1001
Description RF Bipolar Transistors RF Transistor
Category MICROWAVE
Availability In Stock
Qty 1
Qty Price
1 + $84.33753
Manufacturer Available Qty
APT
Date Code: 0328
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM
DESCRIPTION:DESCRIPTION:
The MS1001 is a 12.5V Class C silicon NPN transistor
designed primarily for HF communications. Diffused
emitter resistors provide infinite VSWR capability
under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
36
V
V
CEO
Collector-Emitter Voltage
18 V
V
EBO
Emitter-Base Voltage
4.0 V
I
C
Device Current
20 A
P
D
Total Dissipation
270 W
Tj
Junction Temperature
200
º C
T
STG
Storage Temperature
-65 to +150
º C
Thermal DataThermal Data
R
TH(J-C)
Thermal Resistance Junction-case 0.65
°°C/W
FeaturesFeatures
• 30 MHz
• 12.5 VOLTS
• IMD = -32 dBc
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• P
OUT
= 75 WATTS
• G
P
= 13dB MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Value
Symbol Test Conditions
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 50 mA I
E
= 0 mA 36 --- --- V
BV
CES
I
C
= 100 mA V
BE
= 0 V 36 --- --- V
BV
CEO
I
C
= 100 mA I
B
= 0 mA 18 --- --- V
BV
EBO
I
E
= 10 mA I
C
= 0 mA 4.0 --- ---
V
I
CES
V
CE
= 15 V I
E
= 0 mA --- --- 15 mA
h
FE
V
CE
= 5 V I
C
= 5 A 20 --- 200 ---
DYNAMICDYNAMIC
Value
Symbol Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
f = 30MHz P
IN
= 3.8 W V
CE
=12.5V 75 --- --- WPEP
G
P
f = 30MHz P
IN
= 3.8 W V
CE
=12.5V 13 --- ---
dB
IMD* f = 30MHz V
CC
=12.5V I
CQ
= 100mA -32 --- --- dB
C
C
OB
f = 1 MHz V
CB
=12V --- 350 --- pf
Condition
s
f1 = 30.000 MHz f2 = 30.001 MHz
IMPEDANCE DATAIMPEDANCE DATA
FREQ
Z
IN
(Ω)Ω) Z
CL
(Ω)Ω)
30 MHz 0.7 + j0.75 1.2 + j1.0
P
IN
= 3.8W
V
CC
=12.5V
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATA
Address
Freelance Electronics
13197 Sandoval Street
Santa Fe Springs, CA 90670
 
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(Deadline for next day shipment 2:00pm PST)
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