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an AMP company
RF MOSFET Power Transistor, 3OW, 12V
2 - 175 MHz
DUI 230s
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications
. .
Absolute Maximum Ratings at 25°C
Parameter
1 Symbol 1
Rating
1 Units 1
Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
V
DS
40 V
V
0s
20
V
‘Ds
8
A
1 Power Dissipation
I PO I
175
I w I
Junction Temperature
Storage Temperature
TJ
200 “C
T
STG
-55to+150 “C
Thermal Resistance
I BJC I 1 I “C/w I
1 E
1 6.22 1 6.48 1 245 1 255 1
F 5.64 5.79 222 22s
G 1 2.92 1 3.30 1 .llS 1 ,130
Electrical Characteristics at 25°C
Input Capacitance
V,,=12.0 V, F=l.O MHz
Output Capacitance C
0%
120 pF
V&2.0 V, F=l .O MHz
ReverseCapacitance C
Rss
24 pF
V&2.0 V, F=l .O MHz
Power Gain
GP
9.0 - dB
Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
Drain Efficiency
9D
50 - %
V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
Load Mismatch Tolerance
VSWR-T - 3O:l -
V,,=l2.0 V, I,,=200 mA, PO,,=30 W, F=l75 MHz
Specifications Subject to Change Without Notice.
MIA-COM, Inc.
North America: Tel. (800) 366-2266
n Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020
