SB 3XX -1.5
Chips for Schottky Diodes
Chip Specification
General Description:
Schottky Diode chips with Mo-barrier for switch mode power
rectifiers with the following features:
* Guard-ring for stress protection
* Extremely low forward voltage
* 125
℃
℃℃
℃
operation junction temperature
* reverse avalanche behavior
Mechanical Data:
SB 3XX
passivated Silicon Chip
Demension(mm) 1,5x1,5
Thickness: 350 +- 20
µ
m
Metallization:
Top ( Anode ) : Al Ag
Bottom ( Cathode) : TiNiAg
Forward Current(A) 3 A
Reverse Voltage (V):
23, 43, 100 V
Type
Chip
V
R
(V)
VF(V)@25 C
I
RM
@V
RMM
size(mm) at If=1A
at 25 C
SB320 1,5x1,5 23 V 440mV 0,5mA
SB340 1,5x1,5 43 V 510mV 0,5mA
SB2100 1,5x1,5 100 V 730mV 0,5mA
Note: Other voltages, Vf & Top Metal AL are available
