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P2702AB

Part # P2702AB
Description SIDAC 2CHP 120/240V 250A TO-220
Category MICROCIRCUITS
Availability In Stock
Qty 1420
Qty Price
1 - 135 $1.10697
136 - 340 $0.88054
341 - 662 $0.83022
663 - 1,004 $0.77152
1,005 + $0.68766
Manufacturer Available Qty
TECCOR ELECTRONICS
Date Code: 0406
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

R
o
H
S
Telecom Design Guide • © 2006 Littelfuse 3 - 45 www.littelfuse.com
SIDACtor Devices
Two-chip SIDACtor® Device
The two-chip SIDACtor design provides a through-hole technology protection solution. It is
intended for telecom applications that do not require a balanced solution. For primary
protection applications, devices with higher holding current and integrated failsafe options
are available.
SIDACtor devices enable equipment to comply with various regulatory requirements
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A
(formerly known as FCC Part 68).
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For individual “AA”, “AB”, and “AC” surge ratings, see table below.
General Notes:
All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
* Current waveform in µs
** Voltage waveform in µs
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
DRM
Volts
V
S
Volts
V
T
Volts
I
DRM
µAmps
I
S
mAmps
I
T
Amps
I
H
mAmpsPins 1-2, 3-2 Pins 1-3
P0602A_L 25 40 50 80 4 5 800 2.2 50
P1402A_L 58 77 116 154 4 5 800 2.2 150
P1602A_L 65 95 130 190 4 5 800 2.2 150
P2202A_L 90 130 180 260 4 5 800 2.2 150
P2702A_L 120 160 240 320 4 5 800 2.2 150
P3002A_L 140 180 280 360 4 5 800 2.2 150
P3602A_L 170 220 340 440 4 5 800 2.2 150
P4202A_L 190 250 380 500 4 5 800 2.2 150
P4802A_L 220 300 440 600 4 5 800 2.2 150
P6002A_L 275 350 550 700 4 5 800 2.2 150
Surge Ratings in Amps
Series
I
PP
I
TSM
50 / 60 Hz di/dt
0.2x310 *
0.5x700 **
2x10 *
2x10 **
8x20 *
1.2x50 **
10x160 *
10x160 **
10x560 *
10x560 **
5x320 *
9x720 **
10x360 *
10x360 **
10x1000 *
10x1000 **
5x310 *
10x700 **
Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps/µs
A 20 150 150 90 50 75 75 45 75 20 500
B 25 250 250 150 100 100 125 80 100 30 500
C 50 500 400 200 150 200 175 100 200 50 500
1
2
3
(T)
(R)
(G)
www.littelfuse.com 3 - 46 © 2006 Littelfuse • Telecom Design Guide
Two-chip SIDACtor® Device
Note: Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias.
Thermal Considerations
Package Symbol Parameter Value Unit
Modified
TO-220
T
J
Operating Junction Temperature Range -40 to +150 °C
T
S
Storage Temperature Range -65 to +150 °C
R
θJA
Thermal Resistance: Junction to Ambient 50 °C/W
Capacitance Values
Part Number
pF
Pin 1-2 / 3-2
Tip-Ground, Ring-Ground
pF
Pin 1-3
Tip-Ring
MIN MAX MIN MAX
P0602AAL 15 145 10 90
P0602ABL 15 250 10 145
P0602ACL 25 250 10 145
P1402AAL 40 60 20 35
P1402ABL 40 155 20 90
P1402ACL 55 155 30 90
P1602AAL 35 60 20 35
P1602ABL 35 145 20 85
P1602ACL 45 145 25 85
P2202AAL 30 50 15 30
P2202ABL 30 115 15 65
P2202ACL 45 115 25 65
P2702AAL 25 45 15 25
P2702ABL 25 105 15 60
P2702ACL 40 105 20 60
P3002AAL 25 40 15 25
P3002ABL 25 95 15 55
P3002ACL 35 95 20 55
P3602AAL 25 35 10 20
P3602ABL 25 90 10 50
P3602ACL 35 90 15 50
P4202AAL 25 35 10 20
P4202ABL 25 85 10 50
P4202ACL 30 85 15 50
P4802AAL 20 35 10 20
P4802ABL 20 85 10 50
P4802ACL 30 85 15 50
P6002AAL 20 35 10 20
P6002ABL 20 80 10 45
P6002ACL 30 80 15 45
PIN 1
PIN 2
PIN 3
Two-chip SIDACtor® Device
Telecom Design Guide • © 2006 Littelfuse 3 - 47 www.littelfuse.com
SIDACtor Devices
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+
V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t – Time (µs)
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
t
r
x t
d
Pulse Waveform
-8
-40 -20 0 20 40 60 80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) – ˚C
Percent of V
S
Change – %
25 ˚C
Normalized V
S
Change versus Junction Temperature
0.4
-40 -20 0 20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (T
C
) – ˚C
Ratio of
I
H
I
H
(T
C
= 25 ˚C)
25 ˚C
Normalized DC Holding Current versus Case Temperature