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A-8103

Part # A-8103
Description Power Transformer 24.5:1 1000Vrms Solder Lug Flange Mount
Category MICROCIRCUITS
Availability In Stock
Qty 1
Qty Price
1 + $25.00000
Manufacturer Available Qty
STANCOR
Date Code: 9045
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TPCA8103
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS)
TPCA8103
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 3.1 m (typ.)
High forward transfer admittance: |Y
fs
| =45S (typ.)
Low leakage current: I
DSS
= 10 µA (max) (V
DS
= 30 V)
Enhancement mode: V
th
= 0.8 to 2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage
V
DSS
30 V
Drain-gate voltage (R
GS
= 20 k)
V
DGR
30 V
Gate-source voltage
V
GSS
±20 V
DC (Note 1) I
D
40
Drain current
Pulsed (Note 1) I
DP
120
A
Drain power dissipation (Tc=25°C) P
D
45 W
Drain power dissipation (t = 10 s)
(Note 2a)
P
D
2.8 W
Drain power dissipation (t = 10 s)
(Note 2b)
P
D
1.6 W
Single pulse avalanche energy
(Note 3)
E
AS
208 mJ
Avalanche current I
AR
40 A
Repetitive avalanche energy
(Tc=25°C) (Note 4)
E
AR
4.5 mJ
Channel temperature
T
ch
150 °C
Storage temperature range
T
stg
55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
5.0±0.2
0.95±0.05
0.166±0.05
S
0.05 S
A
0.5±0.1
6.0±0.3
1.27
0.4±0.1
5.0±0.2
0.595
0.05 M A
1
4
5
8
0.15±0.05
0.8±0.1
1.1±0.2
4.25±0.2
0.6±0.1
3.5±0.2
1
4
58
1,2,3SOURCE
4GATE
5,6,7,8DRAIN
JEDEC
JEITA
TOSHIBA 2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8 6
1 2 3
7 5
4
TPCA8103
2006-11-16
2
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case
(Tc=25°C)
R
th (ch-c)
2.78 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
R
th (ch-a)
44.6 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
th (ch-a)
78.1 °C/W
Marking
(Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
= 24 V T
ch
= 25°C (initial) L = 100µH R
G
= 25 I
AR
= 40 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
TPC
A
8103
Lot No.
Type
Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
TPCA8103
2006-11-16
3
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±16 V, V
DS
= 0 V ±10 µA
Drain cut-OFF current I
DSS
V
DS
= 30 V, V
GS
= 0 V 10 µA
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 30
Drain-source breakdown voltage
V
(BR) DSX
I
D
= 10 mA, V
GS
= 20 V 13
V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 0.8 2.0 V
V
GS
= 4 V, I
D
= 20 A 5.2 6.8
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
= 20 A 3.1 4.2
m
Forward transfer admittance |Y
fs
| V
DS
= 10 V, I
D
= 20 A 22.5 45 S
Input capacitance C
iss
7880
Reverse transfer capacitance C
rss
1340
Output capacitance C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
1450
pF
Rise time t
r
15
Turn-ON time t
on
13
Fall time t
f
251
Switching time
Turn-OFF time t
off
Duty
<
=
1%, t
w
= 10 µs
596
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
184
Gate-source charge 1 Q
gs1
12
Gate-drain (“miller”) charge Q
gd
V
DD
24 V, V
GS
= 10 V,
I
D
= 40 A
58
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
DRP
120 A
Forward voltage (diode) V
DSF
I
DR
= 40 A, V
GS
= 0 V 1.2 V
R
L
= 0.8
V
DD
15 V
0 V
V
GS
10 V
4.7
I
D
= 20A
V
OUT
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