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Part # 3000
Description DUP RCPT PORTABLE OUTLET BX
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Technical Document


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Dual-Core Intel® Xeon® Processor 3000 Series Datasheet 27
Electrical Specifications
2.7.2 CMOS and Open Drain Signals
Legacy input signals such as A20M#, IGNNE#, INIT#, SMI#, and STPCLK# use CMOS
input buffers. All of the CMOS and Open Drain signals are required to be asserted/de-
asserted for at least four BCLKs in order for the processor to recognize the proper
signal state. See Section 2.7.3 for the DC. See Section 6.2 for additional timing
requirements for entering and leaving the low power states.
2.7.3 Processor DC Specifications
The processor DC specifications in this section are defined at the processor core (pads)
unless otherwise stated. All specifications apply to all frequencies and cache sizes
unless otherwise stated.
.
Table 2-11. GTL+ Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
1
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
V
IL
Input Low Voltage -0.10 GTLREF – 0.10 V
2, 3
2. V
IL
is defined as the voltage range at a receiving agent that will be interpreted as a logical low value.
3. The V
TT
referred to in these specifications is the instantaneous V
TT
.
V
IH
Input High Voltage GTLREF + 0.10 V
TT
+ 0.10 V
4, 5, 3
4. V
IH
is defined as the voltage range at a receiving agent that will be interpreted as a logical high value.
5. V
IH
and V
OH
may experience excursions above V
TT
.
V
OH
Output High Voltage V
TT
– 0.10 V
TT
V
5, 3
I
OL
Output Low Current N/A V
TT_MAX
/[(R
TT_MIN
)+(2*R
ON_
MIN
)]
A-
I
LI
Input Leakage Current N/A ± 100 µA
6
6. Leakage to V
SS
with land held at V
TT
.
I
LO
Output Leakage Current N/A ± 100 µA
7
7. Leakage to V
TT
with land held at 300 mV.
R
ON
Buffer On Resistance 10 13 Ω
Table 2-12. Open Drain and TAP Output Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
1
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
V
OL
Output Low Voltage 0 0.20 V -
V
OH
Output High Voltage
V
TT
0.05
V
TT
+
0.05
V
2
2. V
OH
is determined by the value of the external pull-up resister to V
TT
. Refer to theappropriate platform design
guide for details.
I
OL
Output Low Current 16 50 mA
3
3. Measured at V
TT
* 0.2.
I
LO
Output Leakage Current N/A ± 200 µA
4
4. For Vin between 0 and V
OH
.
Electrical Specifications
28 Dual-Core Intel® Xeon® Processor 3000 Series Datasheet
Note:
1. V
TT
supplies the PECI interface. PECI behavior does not affect V
TT
min/max specifications.
2. The leakage specification applies to powered devices on the PECI bus.
3. The input buffers use a Schmitt-triggered input design for improved noise immunity.
Table 2-13. CMOS Signal Group DC Specifications
Symbol Parameter Min Max Unit Notes
1
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
V
IL
Input Low Voltage -0.10 V
TT
* 0.30 V
2, 3
2. V
IL
is defined as the voltage range at a receiving agent that will be interpreted as a logical low value.
3. The V
TT
referred to in these specifications refers to instantaneous V
TT
.
V
IH
Input High Voltage V
TT
* 0.70 V
TT
+ 0.10 V
3, 4, 5
4. V
IH
is defined as the voltage range at a receiving agent that will be interpreted as a logical high value.
5. V
IH
and V
OH
may experience excursions above V
TT
.
V
OL
Output Low Voltage -0.10 V
TT
* 0.10 V
3
V
OH
Output High Voltage 0.90 * V
TT
V
TT
+ 0.10 V
3, 6, 5
6. All outputs are open drain.
I
OL
Output Low Current 1.70 4.70 mA
3, 7
7. I
OL
is measured at 0.10 * V
TT.
I
OH
is measured at 0.90 * V
TT.
I
OH
Output High Current 1.70 4.70 mA
3, 7
I
LI
Input Leakage Current N/A ± 100 µA
8
8. Leakage to V
SS
with land held at V
TT
.
I
LO
Output Leakage Current N/A ± 100 µA
9
9. Leakage to V
TT
with land held at 300 mV.
Table 2-14. PECI DC Electrical Limits
Symbol Definition and Conditions Min Max Units Notes
V
in
Input Voltage Range -0.15 V
TT
+ 0.15 V
V
hysteresis
Hysteresis 0.1 * V
TT
—V3
V
n
Negative-edge threshold voltage 0.275 * V
TT
0.500 * V
TT
V
V
p
Positive-edge threshold voltage 0.550 * V
TT
0.725 * V
TT
V
I
source
High level output source
(V
OH
= 0.75 * V
TT)
-6.0 N/A mA
I
sink
Low level output sink
(V
OL
= 0.25 * V
TT
)
0.5 1.0 mA
I
leak+
High impedance state leakage to V
TT
N/A 50 µA 2
I
leak-
High impedance leakage to GND N/A 10 µA 2
C
bus
Bus capacitance 10 pF
V
noise
Signal noise immunity above 300 MHz 0.1 * V
TT
—V
p-p
Dual-Core Intel® Xeon® Processor 3000 Series Datasheet 29
Electrical Specifications
2.7.3.1 GTL+ Front Side Bus Specifications
In most cases, termination resistors are not required as these are integrated into the
processor silicon. See Table 2-9 for details on which GTL+ signals do not include on-die
termination.
Valid high and low levels are determined by the input buffers by comparing with a
reference voltage called GTLREF. Table 2-15 lists the GTLREF specifications. The GTL+
reference voltage (GTLREF) should be generated on the system board using high
precision voltage divider circuits.
2.7.4 Clock Specifications
2.7.5 Front Side Bus Clock (BCLK[1:0]) and Processor Clocking
BCLK[1:0] directly controls the FSB interface speed as well as the core frequency of the
processor. As in previous generation processors, the processor’s core frequency is a
multiple of the BCLK[1:0] frequency. The processor bus ratio multiplier will be set at its
default ratio during manufacturing. Refer to Table 2-16 for the processor supported
ratios.
The processor uses a differential clocking implementation. For more information on the
processor clocking, contact your Intel Field representative. Platforms using a CK505
Clock Synthesizer/Driver should comply with the specifications in Section 2.7.8.
Platforms using a CK410 Clock Synthesizer/Driver should comply with the specifications
in Section 2.7.9.
Table 2-15. GTL+ Bus Voltage Definitions
Symbol Parameter Min Typ Max Units Notes
1
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
GTLREF_PU GTLREF pull up resistor on
Mukilteo-2 (3000/3010) chipset
family boards
124 * 0.99 124 124 * 1.01 Ω
2
2. GTLREF is to be generated from V
TT
by a voltage divider of 1% resistors (one divider for each GTLEREF land).
Refer to the applicable platform design guide for implementation details.
GTLREF_PD GTLREF pull down resistor on
Mukilteo-2 (3000/3010) chipset
family boards
210 * 0.99 210 210 * 1.01 Ω
2
GTLREF_PU GTLREF pull up resistor on
Bearlake chipset family boards
100 * 0.99 100 100 * 1.01 Ω
2
GTLREF_PD GTLREF pull down resistor on
Bearlake chipset family boards
200 * 0.99 200 200 * 1.01 Ω
2
R
TT
Termination Resistance 45 50 55 Ω
3
3. R
TT
is the on-die termination resistance measured at V
TT
/3 of the GTL+ output driver. Refer to the appropriate
platform design guide for the board impedance. Refer to processor I/O buffer models for I/V characteristics.
COMP[3:0] COMP Resistance 49.40 49.90 50.40 Ω
4
4. COMP resistance must be provided on the system board with 1% resistors. See the applicable platform design
guide for implementation details. COMP[3:0] and COMP8 resistors are to V
SS
.
COMP8 COMP Resistance 24.65 24.90 25.15 Ω
4
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