3
Absolute Maximum Ratings at T
A
= 25°C
Parameter Value
Peak Forward Current
[1,2]
300 mA
Average Forward Current
[2]
20 mA
DC Current
[3]
30 mA
Power Dissipation 87 mW
Reverse Voltage (I
R
= 100 µA) 5 V
Transient Forward Current (10 µs Pulse)
[4]
500 mA
LED Junction Temperature 110°C
Operating Temperature Range -20 to +100°C
Storage Temperature Range -55 to +100°C
Wave Soldering Temperature [1.59 mm (0.063 in.) from body] 250°C for 3 seconds
Lead Solder Dipping Temperature [1.59 mm (0.063 in.) from body] 260°C for 5 seconds
Notes:
1. Maximum I
PEAK
at f = 1 kHz, DF = 6.7%.
2. Refer to Figure 6 to establish pulsed operating conditions.
3. Derate linearly as shown in Figure 5.
4. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and wire bonds. It is
not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
Electrical/Optical Characteristics at T
A
= 25°C
Symbol Description Min. Typ. Max. Unit Test Condition
V
F
Forward Voltage 1.8 2.2 V I
F
= 20 mA
V
R
Reverse Breakdown Voltage 5.0 15.0 V I
R
= 100 µA
λ
p
Peak Wavelength 645 nm Measurement at Peak
λ
d
Dominant Wavelength 637 nm Note 1
∆λ
1
/2 Spectral Line Halfwidth 20 nm
τ
S
Speed of Response 30 ns Exponential Time
Constant, e
-t
/T
S
C Capacitance 30 pF V
F
= 0, f = 1 MHz
Rθ
J-PIN
Thermal Resistance 260
[3]
°C/W Junction to Cathode Lead
210
[4]
290
[5]
η
V
Luminous Efficacy 80 Im/W Note 2
Notes:
1. The dominant wavelength, λ
d
, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= l
V
/η
V
, where I
V
is the luminous intensity in candelas and η
V
is
luminous efficacy in lumens/watt.
3. HLMP-D101.
4. HLMP-D105.
5. HLMP-K101/-K105.
