SYLVANIA 10AS

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Item Description: Lamps CML Bulb

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Feb.1999
FS10AS-06
OUTLINE DRAWING Dimensions in mm
MP-3
MITSUBISHI Nch POWER MOSFET
FS10AS-06
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
60
±20
10
40
10
10
40
30
–55 ~ +150
–55 ~ +150
0.26
V
GS = 0V
V
DS = 0V
L = 100µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
6.5
2.3
2.3
0.9MAX.
1.0MAX.
2.3
1.0
0.5 ± 0.1
5.5 ± 0.2
10MAX.
2.3MIN. 1.5 ± 0.2
0.5 ± 0.2
0.8
5.0 ± 0.2
A
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
qwe
r
e
¡10V DRIVE
¡V
DSS .................................................................................. 60V
¡r
DS (ON) (MAX) ..............................................................78m
¡I
D ......................................................................................... 10A
¡Integrated Fast Recovery Diode (TYP.)
............. 55ns
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
0
10
20
30
40
50
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C (°C)
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS (V)
DRAIN CURRENT ID (A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
210
0
357 2 10
1
357 2 10
2
357 2
10
–1
10
0
10
1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
tw = 10ms
T
C
= 25°C
Single Pulse
100ms
10ms
1ms
DC
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6 2.0
V
GS
= 20V 10V 8V 7V
5V
6V
Tc = 25°C
Pulse Test
P
D
= 30W
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1.0
V
GS
= 20V
5V
6V10V 8V
Tc = 25°C
Pulse Test
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
m
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
60
2.0
3.0
58
0.29
9.0
600
180
60
18
22
30
17
1.0
55
±0.1
0.1
4.0
78
0.39
1.5
4.17
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions
Limits
Min. Typ. Max.
I
D = 1mA, VGS = 0V
V
GS = ±20V, VDS = 0V
V
DS = 60V, VGS = 0V
I
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 5V
V
DS = 10V, VGS = 0V, f = 1MHz
V
DD = 30V, ID = 5A, VGS = 10V, RGEN = RGS = 50
I
S = 5A, VGS = 0V
Channel to case
I
S = 10A, dis/dt = –100A/µs
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-06
HIGH-SPEED SWITCHING USE
0
8
16
24
32
40
0 4 8 12 16 20
Tc = 25°C
V
DS
= 10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(m)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25°C
V
DS
= 5V
Pulse Test
75°C
125°C
0
20
40
60
80
100
10
0
357 2 10
1
357 2 10
2
357 23
V
GS
= 10V
20V
T
C
= 25°C
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
0 4 8 12 16 20
Tc = 25°C
Pulse Test
10A
5A
I
D
= 15A
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
Tch = 25°C
V
DD
= 30V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
f
t
r
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357 32
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
Ciss
Coss
Crss
12NEXT

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