COILCRAFT 1812SMS-68NJLB

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Item Description: Fixed Inductors 1812SMS MidiSpring 68 nH 5 % 2.5 A

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1 + $0.16720



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COILCRAFT
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1 of 10
Optimum Technology Matching
®
Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Ordering Information
BiFET HBT
SOI
RF IN
VG
Pin 1 (CUT)
G
B
G
ND
B
ASE
RF OU
T
VD
Pin 2
T
RFHA1025
280W GaN Wideband Pulsed Power Amplifier
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Features
Wideband Operation: 0.96GHz to
1.215GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
Conditions
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High Terminal
Impedances
50V Operation Typical
Performance
Output Pulsed Power 280W
Pulse Width 100S,
Duty Cycle 10%
Small Signal Gain 17dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
DS120928
Package: Flanged Ceramic, 2-Pin
RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
RFHA1025S2 2-Piece sample bag
RFHA1025SB 5-Piece bag
RFHA1025SQ 25-Piece bag
RFHA1025SR 50 Pieces on 7” short reel
RFHA1025TR13 250 Pieces on 13” reel
RFHA1025PCBA-410 Fully assembled evaluation board 0.96GHz to .215GHz;50V
2 of 10
RFHA1025
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter Rating Unit
Drain Voltage (V
D
)150V
Gate Voltage (V
G
)-8 to 2V
Gate Current (I
G
)155mA
Ruggedness (VSWR) 10:1
Storage Temperature Range -55 to +125 °C
Operating Temperature Range (T
C
)-40 to +85°C
Operating Junction Temperature (T
J
)250°C
Human Body Model Class 1B
MTTF (T
J
< 200°C, 95% Confidence Limits)* 1.8E + 07 Hours
MTTF (T
J
< 250°C, 95% Confidence Limits)* 1.1E + 05 Hours
Thermal Resistance, R
TH
(junction to case):
T
C
= 85°C, DC bias only
T
C
= 85°C, 100s pulse, 10% duty cycle
T
C
= 85°C, 1ms pulse, 10% duty cycle
0.90
0.18
0.34
°C/W
* MTTF - median time to failure for wear-out failure mode (30% I
DSS
degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P
DISS
< (T
J
- T
C
)/R
TH
J - C and T
C
= T
CASE
Parameter
Specification
Unit Condition
Min. Typ. Max.
Recommended Operating Conditions
Drain Voltage (V
DSQ
)50V
Gate Voltage (V
GSQ
)-8-3-2V
Drain Bias Current 440 mA
Frequency of Operation 960 1215 MHz
DC Functional Test
I
G (OFF)
– Gate Leakage 2 mA V
G
= -8V, V
D
= 0V
I
D (OFF)
– Drain Leakage 2.5 mA V
G
= -8V, V
D
= 50V
V
GS (TH)
– Threshold Voltage -3.5 V V
D
= 50V, I
D
= 40mA
V
DS (ON)
– Drain Voltage at High
Current
0.28 V V
G
= 0V, I
D
= 1.5A
RF Functional Test
[1], [2]
Small Signal Gain 17 dB f = 960MHz, P
IN
= 28dBm
Power Gain 13 14.2 dB f = 960MHz, P
IN
= 41dBm
Input Return Loss -7.5 -5 dB
Output Power 54 55.2 dBm
Drain Efficiency 50 55 %
Small Signal Gain 17 dB f = 1215MHz, P
IN
= 28dBm
Power Gain 13 13.6 dB f = 1215MHz, P
IN
= 41dBm
Input Return Loss -7 -5 dB
Output Power 54 54.6 dBm
Drain Efficiency 50 59 %
3 of 10
RFHA1025
DS120928
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
RF Typical Performance
[1], [2]
Frequency Range 960 1215 MHz
Small Signal Gain 17 dB P
IN
= 28dBm
Power Gain 14 dB P
OUT
= 54.5dBm
Gain Variation with Temperature dB/°C At peak output power
Output Power (P
SAT
) 54.5 dBm Peak output power
280 W
Drain Efficiency 55 % At peak output power
[1] Test Conditions: PW = 100s, DC = 10%, V
DSQ
= 50V, I
DQ
= 440mA, T = 25°C.
[2] Performance in a standard tuned test fixture.
Parameter
Specification
Unit Condition
Min. Typ. Max.
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