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A01TKLC

Part # A01TKLC
Description Fixed Inductors A0XT Mini Spring 2.5 nH 10 % 4 A
Category INDUCTOR
Availability In Stock
Qty 540
Qty Price
1 - 113 $0.60192
114 - 226 $0.47880
227 - 340 $0.45144
341 - 453 $0.41952
454 + $0.37392
Manufacturer Available Qty
COILCRAFT
Date Code: 0308
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
13
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS 470--860 MHz REFERENCE CIRCUIT
G
ps
, POWER GAIN (dB)
#
D
, DRAIN
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
Figure 19. DVB--T (8k OFDM) Drain Efficiency, Power Gain and
IMD Shoulder versus Output Power 470--860 MHz
5--30
P
out
, OUTPUT POWER (WATTS) AVG.
40
5
25
10
-- 5
-- 1 5
G
ps
V
DD
= 50 Vdc, I
DQ
= 700 mA
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
30
15
#
D
20
IMD
(1)
470 MHz
665 MHz
665 MHz
--
0
-- 1 0
-- 2 0
860 MHz
470 MHz
665 MHz
860 MHz
470 MHz
860 MHz
35
400 20080 120 160
-- 2 5
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
G
ps
, POWER GAIN (dB)
T
C
=35&C
f, FREQUENCY (MHz)
Figure 20. Broadband Power Gain and IRL versus Frequency
900450
IRL, INPUT RETURN LOSS (dB)
V
DD
=50Vdc,P
out
= 125 W Avg.
I
DQ
= 1400 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
10
21
17
13
19
15
-- 1 2
0
-- 3
500 600 700 800
-- 4
-- 11
G
ps
IRL
75&C
22
20
18
16
14
12
11
550 650 750 850
-- 1
-- 2
-- 5
-- 6
-- 1 0
-- 9
-- 7
-- 8
75&C
50&C
50&C
35&C
f, FREQUENCY (MHz)
Figure 21. Broadband Drain Efficiency and IMD Shoulder versus Frequency
900450
V
DD
=50Vdc,P
out
= 125 W Avg., I
DQ
= 1400 mA
DVB--T (8k OFDM), 64 QAM Data Carrier Modulation, 5 Symbols
#
D
- DRAIN EFFICIENCY (%)
17
37
35
27
31
-- 3 5
-- 1 5
-- 1 9
-- 2 3
-- 1 7
-- 2 1
T
C
=35&C
IMD
(1)
#
D
35&C
75&C
500 600 700 800
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
29
19
21
-- 2 5
-- 2 9
-- 2 7
-- 3 3
-- 3 1
550 650 750 850
50&C
50&C
75&C
33
25
23
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
14
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
470--860 MHz REFERENCE CIRCUIT
Z
o
=10*
Z
source
f = 470 MHz
f = 860 MHz
f = 470 MHz
f = 860 MHz
Z
load
V
DD
=50Vdc,I
DQ
= 1400 mA, P
out
= 125 W Avg.
f
MHz
Z
source
*
Z
load
*
470 1.96 -- j3.13 5.30 + j1.92
500 1.91 -- j2.46 4.65 + j1.95
530 1.88 -- j1.86 4.50 + j2.35
560 1.91 -- j1.37 4.71 + j2.66
590 1.93 -- j0.94 5.40 + j2.75
620 1.99 -- j0.49 5.93 + j2.29
650 2.11 -- j0.14 6.03 + j1.81
680 2.17 + j0.02 6.04 + j1.45
710 2.14 + j0.26 5.58 + j0.95
740 2.11 + j0.32 5.37 + j0.80
770 1.92 + j0.56 4.80 + j0.56
800 1.65 + j0.91 4.78 + j0.55
830 1.50 + j1.07 4.59 + j0.45
860 0.95 + j1.72 3.93 + j0.11
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Figure 22. Broadband Series Equivalent Source and Load Impedance 470--860 MHz
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
15
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
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