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A01TKLC

Part # A01TKLC
Description Fixed Inductors A0XT Mini Spring 2.5 nH 10 % 4 A
Category INDUCTOR
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
1
RF Device Data
Freescale Semiconductor
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Optimized for broadband operation from 470 to 860 MHz. Devic e has an
integrated input matching network for better power distribution. These devices
are ideally suited for use in analog or digital television transmitters.
! Typical Narrowband Performance: V
DD
=50Volts,I
DQ
= 1400 mA,
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @
"4 MHz Offset with an Integration Bandwidth of 4 kHz.
Signal Type
P
out
(W)
f
(MHz)
G
ps
(dB)
#
D
(%)
ACPR
(dBc)
IRL
(dB)
DVB--T (8k OFDM) 125 Avg. 860 19.3 30.0 --60.5 -- 1 2
! Typical Pulsed Broadband Performance: V
DD
=50Volts,I
DQ
= 1400 mA,
Pulsed Width = 100 $sec, Duty Cycle = 10%
Signal Type
P
out
(W)
f
(MHz)
G
ps
(dB)
#
D
(%)
Pulsed 600 Peak
470 19.3 47.1
650 20.0 53.1
860 18.8 48.9
Features
! Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc,
860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input
Overdrive from Rated P
out
)
! Exceptional Efficiency for Class AB Analog or Digital Television Operation
! Full Performance across Complete UHF TV Spectrum, 470--860 MHz
! Capable of 600 Watt CW Output Power with Adequate Thermal Management
! Integrated Input Matching
! Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V
% Improves Class C Performance, e.g. in a Doherty Peaking Stage
% Enables Fast, Easy and Complete Shutdown of the Amplifier
! Characterized from 20 V to 50 V for Extended Operating Range for use
with Drain Modulation
! Excellent Thermal Characteristics
! RoHS Compliant
! In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +130 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Storage Temperature Range T
stg
--65 to +150 &C
Case Operating Temperature T
C
150 &C
Total Device Dissipation @ T
C
=25&C
Derate above 25&C
P
D
1052
5.26
W
W/&C
Operating Junction Temperature
(1,2)
T
J
225 &C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available a t http://www.freescale.com/rf
. Select Software &
Tools/Development Tools/Calculators to access MTTF calculators by product.
Document Number: MRFE6VP8600H
Rev. 1, 9/2011
Freescale Semiconductor
Technical Data
470--860 MHz, 600 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP8600HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP8600HSR6
PARTS ARE PUSH--PULL
Figure 1. Pin Connections
(Top View)
Drain 1
31
42
Drain 2
Gate 1
Gate 2
Note: The backside of the package is the
source terminal for the transistor.
' Freescale Semiconductor , Inc., 201 1.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74&C, 125 W CW, 50 V, 1400 mA, 860 MHz
R
(
JC
0.19
(3)
&C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115) B (201--400 V)
Charge Device Model (per JESD22--C101) IV (>1000 V)
Table 4. Electrical Characteristics (T
A
=25&C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
1 $Adc
Drain--Source Breakdown Voltage
(V
GS
=0Vdc,I
D
= 100 mA)
V
(BR)DSS
130 140 Vdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=50Vdc,V
GS
=0Vdc)
I
DSS
5 $Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
=0Vdc)
I
DSS
20 $Adc
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
=10Vdc,I
D
= 980 $Adc)
V
GS(th)
1.5 2.07 2.5 Vdc
Gate Quiescent Voltage
(5)
(V
DD
=50Vdc,I
D
= 1400 mAdc, M easured in Functional Test)
V
GS(Q)
2.1 2.65 3.1 Vdc
Drain--Source On--Voltage
(4)
(V
GS
=10Vdc,I
D
=2Adc)
V
DS(on)
0.24 Vdc
Forward Transconductance
(V
DS
=10Vdc,I
D
=20Adc)
g
fs
15.6 S
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(6)
(V
DS
=50Vdc" 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
rss
1.49 pF
Output Capacitance
(6)
(V
DS
=50Vdc" 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
oss
79.9 pF
Input Capacitance
(7)
(V
DS
=50Vdc,V
GS
=0Vdc" 30 mV(rms)ac @ 1 MHz)
C
iss
264 pF
Functional Tests
(5)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
=50Vdc,I
DQ
= 1400 mA, P
out
= 125 W Avg., f = 860 MHz,
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ "4 MHz Offset with an Integration Bandwidth of 4 kHz.
Power Gain
G
ps
18.0 19.3 21.0 dB
Drain Efficiency #
D
29.0 30.0 %
Adjacent Channel Power Ratio ACPR --60.5 --58.5 dBc
Input Return Loss IRL -- 1 2 -- 9 dB
1. MTTF calculator available a t http://www.freescale.com/rf. Select Software & Tools/Developm ent Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05&C/W due to the increased thermal contact
resistance of this TIM.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
6. Part internally input matched.
7. Die capacitance value without internal matching.
(continued)
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
=25&C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
=50Vdc,I
DQ
= 1400 mA, f = 860 MHz,
DVB--T (8k OFDM) Single Channel.
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,
P
out
= 125 W Avg.
PAR 7.8 dB
Load Mismatch
VSWR >65:1 at all Phase Angles, 3 dB Overdrive from
Rated P
out
(240 W Avg.)
) No Degradation in Output Power
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