4-160
TELCOM SEMICONDUCTOR, INC.
ELECTRICAL CHARACTERISTICS: unless otherwise specified T
A
= +25°C with 10V ≤ V
DD
≤ 18V:
Symbol Parameter Test Condition Min Typ Max Unit
Oscillator
Voltage Stability V
DD
= 7 to 18V – 1 5 %/V
Temperature Stability – 55 ≤ Temp ≤ 125°C – 0.4 – %/°C
Power Supply
Power Supply Current I
DD
0 ≤ V
IN
≤ 3V – 2 3 mA
Switching Time
1
t
R
Rise Time C1 = 1800pF – 23 30 nsec
t
F
Fall Time C1 = 1800pF – 20 30 nsec
t
D1
Delay Time C1 = 1800pF – 140 180 nsec
t
D2
Delay Time C1 = 1800pF – 100 140 nsec
Output
V
OH
High Output Voltage
V
DD
– 0.025
–– V
V
OL
Low Output Voltage – – 0.025 V
R
O
Output Res Hi State V
DD
= 15V – 3.5 5 Ω
R
O
Output Res Lo State V
DD
= 15V – 2.5 5 Ω
I
PK
Peak Output Current V
DD
= 18V – 3 – A
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +20V
Input Voltage, Pin 1 or 4................. V
DD
+0.3 to GND –0.3
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Package Thermal Resistance
CerDIP R
ΘJ-A
................................................................ 150°C/W
CerDIP R
ΘJ-C
................................................................... 50°C/W
PDIP R
ΘJ-A
.................................................................... 125°C/W
PDIP R
ΘJ-C
....................................................................... 42°C/W
SOIC R
ΘJ-A
.................................................................... 155°C/W
SOIC R
ΘJ-C
....................................................................... 45°C/W
Operating Temperature Range
C Version ...............................................0°C to +70°C
E Version ..........................................– 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T
A
≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
ELECTRICAL CHARACTERISTICS: unless otherwise specified T
A
= +25°C with 5V ≤ V
DD
≤ 18V.
Symbol Parameter Test Condition Min Typ Max Unit
Programmable Current Range
Pin 4 Input Current for I
SOURCE
Control (V
REF
- V
R1
) / R
CHG
Fig. 2
5.0 — 150 µA
Pin 1 Input Current for
I
SINK
Control (V
REF
- V
R2
) / R
DIS
Fig. 2
5.0 — 150 µA
Reference Section
V
REF
V
DD
= 15V, I
REF
= 10µA
3.8 4 4.2 V
Line Regulation of V
REF
V
DD
= 7V to 18V — 0.6 1 %/V
Load Regulation of V
REF
I
REF
= 0 to 1mA — 0.1 0.2 %/mA
V
DRIFT
V
REF
Drift Over Lifetime — — 5 %
TCV
REF
V
REF
Tempco
– 55 ≤ Temp ≤ 125°C
— 1100 2000 ppm/°C
V
R1,
V
R2
Voltage at Pin 1 & 4 2.85 3.0 3.15 V
V
REF
- V
R
Voltage Across R
CHG
and R
DIS
0.85 1 1.15 V
V
ih
Pin 2, High Switching Threshold
V
DD
= 15V 1.8 2 2.2 V
V
il
Pin 2, Low Switching Threshold
V
DD
= 15V 0.8 1 1.2 V
V
ih
- V
il
Delta High to Low Threshold
V
DD
= 15V 0.9 1.0 1.1 V
I
REF
V
REF
Pin 3 Short to GND Pin 5
V
DD
= 15V — 8 15 mA
TC96C555
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
