Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature −65˚C to +150˚C
Ambient Temperature under Bias −55˚C to +125˚C
Junction Temperature under Bias
Ceramic −55˚C to +175˚C
V
CC
Pin Potential to
Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-off State −0.5V to 5.5V
in the HIGH State −0.5V to V
CC
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
DC Latchup Source Current −500 mA
Over Voltage Latchup (I/O) 10V
Recommended Operating
Conditions
Free Air Ambient Temperature
Military −55˚C to +125˚C
Supply Voltage
Military +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol Parameter ABT245
Units V
CC
Conditions
Min Typ Max
V
IH
Input HIGH Voltage 2.0 V Recognized HIGH Signal
V
IL
Input LOW Voltage 0.8 V Recognized LOW Signal
V
CD
Input Clamp Diode Voltage −1.2 V Min I
IN
=
−18 mA (OE, T/R)
V
OH
Output HIGH
Voltage
54ABT 2.5 V Min I
OH
=
−3 mA (A
n
,B
n
)
54ABT 2.0 V Min I
OH
=
−24 mA (A
n
,B
n
)
V
OL
Output LOW
Voltage
54ABT 0.55
V Min
I
OL
=
48 mA (A
n
,B
n
)
I
IH
Input HIGH Current 5
µA Max
V
IN
=
2.7V (OE, T/R) (Note 3)
5V
IN
=
V
CC
(OE, T/R)
I
BVI
Input HIGH Current Breakdown Test 7 µA Max V
IN
=
7.0V (OE, T/R)
I
BVIT
Input HIGH Current Breakdown Test
(I/O)
100
µA Max
V
IN
=
5.5V (A
n
,B
n
)
I
IL
Input LOW Current −5
µA Max
V
IN
=
0.5V (OE, T/R) (Note 3)
−5 V
IN
=
0.0V (OE, T/R)
V
ID
Input Leakage Test 4.75
V 0.0
I
ID
=
1.9 µA (OE, T/R)
All Other Pins Grounded
I
IH
+I
OZH
Output Leakage Current 50 µA 0 − 5.5V V
OUT
=
2.7V (A
n
,B
n
); OE
=
2.0V
I
IL
+I
OZL
Output Leakage Current −50 µA 0 − 5.5V V
OUT
=
0.5V (A
n
,B
n
); OE
=
2.0V
I
OS
Output Short-Circuit Current −100 −275 mA Max V
OUT
=
0.0V (A
n
,B
n
)
I
CEX
Output High Leakage Current 50 µA Max V
OUT
=
V
CC
(A
n
,B
n
)
I
ZZ
Bus Drainage Test 100
µA 0.0
V
OUT
=
5.5V (A
n
,B
n
);
All Others GND
I
CCH
Power Supply Current 50 µA Max All Outputs HIGH
I
CCL
Power Supply Current 30 mA Max All Outputs LOW
I
CCZ
Power Supply Current 50
µA Max
OE
=
V
CC
, T/R
=
GND or V
CC
;
All Other GND or V
CC
I
CCT
Additional Outputs Enabled 2.5 mA V
I
=
V
CC
− 2.1V
I
CC
/Input Outputs TRI-STATE 2.5 mA Max OE, T/R V
I
=
V
CC
− 2.1V
Outputs TRI-STATE 50 µA Data Input V
I
=
V
CC
− 2.1V
All Others at V
CC
or GND.
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