Semiconductor Group 62
HYB 3164(5)400J/T-50/-60
16M x 4-DRAM
This device is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in
SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The
circuit and process design allow this device to achieve high performance and low power dissipation.
This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or
LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400J/T to be packaged in a
500mil wide SOJ-34 or TSOP-34 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment.
Ordering Information
Pin Names
Type Ordering
Code
Package Descriptions
HYB 3164400J-50 on request P-SOJ-34-1 500 mil DRAM (access time 50 ns)
HYB 3164400J-60 on request P-SOJ-34-1 500 mil DRAM (access time 60 ns)
HYB 3164400T-50 on request P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3164400T-60 on request P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
HYB 3165400J-50 on request P-SOJ-34-1 500 mil DRAM (access time 50 ns)
HYB 3165400J-60 on request P-SOJ-34-1 500 mil DRAM (access time 60 ns)
HYB 3165400T-50 on request P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3165400T-60 on request P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
A0-A12 Address Inputs for HYB 3164400J/T
A0-A11 Address Inputs for HYB 3165400J/T
RAS Row Address Strobe
OE Output Enable
I/O1-I/O4 Data Input/Output
CAS Column Address Strobe
WRITE Read/Write Input
Vcc Power Supply ( + 3.3V)
Vss Ground
