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TPS54620RGYR

Part # TPS54620RGYR
Description Conv DC-DC Single Step Down 1.6V to 17V 14-Pin VQFN EP T/R
Category IC
Availability Out of Stock
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1 + $1.44950



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
FEATURES
APPLICATIONS
DESCRIPTION
100
95
90
85
80
75
70
65
60
55
50
Efficiency-%
0 1 2 3 4 5 6
LoadCurrent- A
8V
12V
17V
VOUT =3.3V
Fsw=480kHz
PH
PVIN
GND
BOOT
VSENSE
COMP
TPS54620
EN
RT/CLK
SS/TR
PowerPAD
Css
Rrt
R3
C1
Cboot
Co
Lo
R1
R
2
Cin
C2
VIN
VIN
VOUT
PWRGD
TPS54620
www.ti.com
........................................................................................................................................................................................................ SLVS949 MAY 2009
17V Input, 6A Output, Synchronous Step Down Switcher
With Integrated FET in 3.5mm x 3.5mm Package( SWIFT™)
Power Good Output Monitor for Undervoltage
& Overvoltage
2
Integrated 26m / 19m MOSFETs
Adjustable Input Undervoltage Lockout
Split Power Rail: 1.6V to 17V on PVIN
Supported by SwitcherPro™ Software Tool
200kHz to 1.6MHz Switching Frequency
For SWIFT™ Documentation and
Synchronizes to External Clock
SwitcherPro™, visit http://www.ti.com/swift
0.8V ± 1% Voltage Reference Over Temperature
Low 2uA Shutdown Quiscent Current
Monotonic Start-Up into Prebiased Outputs
High Density Distributed Power Systems
40 ° C to 150 ° C Operating Junction
High Peformance Point of Load Regulation
Temperature Range
Broadband, Networking and Optical
Adjustable Slow Start/Power Sequencing
Communications Infrastructure
The TPS54620 in thermally enhanced 3.5mm x 3.5mm QFN package is a full featured 17V, 6A synchronous step
down converter which is optimized for small designs through high efficiency and integrating the high-side and
low-side MOSFETs. Further space savings are achieved through current mode control, which reduces
component count, and by selecting a high switching frequency, reducing the inductor ' s footprint.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone
power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and
the open drain power good pins.
Cycle by cycle current limiting on the high-side fet protects the device in overload situations and is enhanced by
a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit
which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part
when die temperature rises too high.
WHITE SPACE
SIMPLIFIED SCHEMATIC
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 SWIFT, PowerPAD are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
ABSOLUTE MAXIMUM RATINGS
(1)
TPS54620
SLVS949 MAY 2009 ........................................................................................................................................................................................................
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
(1)
T
J
PACKAGE PART NUMBER
(2)
40 ° C to 150 ° C 14 Pin QFN TPS54620RGY
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com .
(2) The RGY package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54620RGYR). See applications
section of data sheet for layout information
over operating temperature range (unless otherwise noted)
VALUE UNIT
VIN 0.3 to 20 V
PVIN 0.3 to 20 V
EN 0.3 to 3 V
BOOT 0.3 to 27 V
Input Voltage VSENSE 0.3 to 3 V
COMP 0.3 to 3 V
PWRGD 0.3 to 6 V
SS/TR 0.3 to 3 V
RT/CLK 0.3 to 6 V
BOOT-PH 0 to 7 V
Output Voltage PH 1 to 20 V
PH 10ns Transient 3 to 20 V
Vdiff(GND to PowerPAD) 0.2 to 0.2 V
RT/CLK ± 100 µ A
Source Current
PH Current Limit A
PH Current Limit A
PVIN Current Limit A
Sink Current
COMP ± 200 µ A
PWRGD 0.1 to 5 mA
Electrostatic Discharge (HBM) QSS 009-105 (JESD22-A114A) 2 kV
Electrostatic Discharge (CDM) QSS 009-147 (JESD22-C101B.01) 500 V
Operating Junction Temperature 40 to 150 ° C
Storage Temperature 65 to 150 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s) :TPS54620
PACKAGE DISSIPATION RATINGS
(1) (2) (3)
ELECTRICAL CHARACTERISTICS
TPS54620
www.ti.com
........................................................................................................................................................................................................ SLVS949 MAY 2009
THERMAL IMPEDANCE ψ
JT
THERMAL CHARACTERISTIC
PACKAGE
JUNCTION TO AMBIENT JUNCTION TO TOP
RGY 32 ° C/W 5 ° C/W
(1) Maximum power dissipation may be limited by overcurrent protection
(2) Power rating at a specific ambient temperature T
A
should be determined with a junction temperature of 150 ° C. This is the point where
distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below
150 ° C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more
information.
(3) Test board conditions:
a. 2.5 inches × 2.5 inches, 4 layers, thickness: 0.062 inch
b. 2 oz. copper traces located on the top of the PCB
c. 2 oz. copper ground planes on the 2 internal layers and bottom layer
d. 4 thermal vias located under the device package
T
J
= 40 ° C to 150 ° C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted)
DESCRIPTION CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage 1.6 17 V
VIN operating input voltage 4.5 17 V
VIN internal UVLO threshold VIN rising 4.0 4.5 V
VIN internal UVLO hysterisis 150 mV
VIN shutdown supply Current EN = 0 V 2 5 µ A
VIN operating non switching supply current VSENSE = 810 mV 600 800 µ A
ENABLE AND UVLO (EN PIN)
Enable threshold Rising 1.21 1.26 V
Enable threshold Falling 1.10 1.17
Input current EN = 1.1 V 1.15 µ A
Hysteresis current EN = 1.3 V 3.4 µ A
VOLTAGE REFERENCE
Voltage reference 0 A Iout 6 A 0.792 0.800 0.808 V
MOSFET
High-side switch resistance BOOT-PH = 3 V 32 60 m
High-side switch resistance
(1)
BOOT-PH = 6 V 26 40 m
Low-side Switch Resistance
(1)
VIN = 12 V 19 30 m
ERROR AMPLIFIER
Error amplifier Transconductance (gm) 2 µ A < ICOMP < 2 µ A, V(COMP) = 1 V 1300 µ Mhos
Error amplifier dc gain VSENSE = 0.8 V 1000 3100 V/V
Error amplifier source/sink V(COMP) = 1 V, 100 mV input overdrive ± 110 µ A
Start switching threshold 0.25 V
COMP to Iswitch gm 16 A/V
CURRENT LIMIT
High-side switch current limit threshold 8 11 A
Low-side switch sourcing current limit 7 10 A
Low-side switch sinking current limit 2.3 A
(1) Measured at pins
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s) :TPS54620
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