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XTR110BG

Part # XTR110BG
Description Voltage to Current Converter16-Pin SBCDIP Tube - Rail/Tub
Category IC
Availability In Stock
Qty 21
Qty Price
1 - 1 $85.71816
2 - 4 $68.18490
5 - 8 $64.28862
9 - 12 $59.74296
13 + $53.24916
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Burr-Brown Corporation
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

FEATURES
● 4mA TO 20mA TRANSMITTER
● SELECTABLE INPUT/OUTPUT RANGES:
0V to +5V, 0V to +10V Inputs
0mA to 20mA, 5mA to 25mA Outputs
Other Ranges
● 0.005% MAX NONLINEARITY, 14 BIT
● PRECISION +10V REFERENCE OUTPUT
● SINGLE-SUPPLY OPERATION
● WIDE SUPPLY RANGE: 13.5V to 40V
APPLICATIONS
● INDUSTRIAL PROCESS CONTROL
● PRESSURE/TEMPERATURE TRANSMITTERS
● CURRENT-MODE BRIDGE EXCITATION
● GROUNDED TRANSDUCER CIRCUITS
● CURRENT SOURCE REFERENCE FOR DATA
ACQUISITION
● PROGRAMMABLE CURRENT SOURCE FOR
TEST EQUIPMENT
● POWER PLANT/ENERGY SYSTEM
MONITORING
DESCRIPTION
The XTR110 is a precision voltage-to-current converter
designed for analog signal transmission. It accepts inputs
of 0 to 5V or 0 to 10V and can be connected for outputs of
4mA to 20mA, 0mA to 20mA, 5mA to 25mA, and many other
commonly used ranges.
A precision on-chip metal film resistor network provides input
scaling and current offsetting. An internal 10V voltage refer-
ence can be used to drive external circuitry.
The XTR110 is available in 16-pin plastic DIP, ceramic DIP
and SOL-16 surface-mount packages. Commercial and in-
dustrial temperature range models are available.
R
5
A
1
A
2
16
1
13
14
7
6
8
10
9
15
12
11
4
3
5
2
R
7
R
6
R
9
R
4
R
3
R
2
R
1
R
8
+10V
Reference
V
REF
Force
V
REF
Sense
V
REF
Adjust
V
IN1
(10V)
V
REF
In
V
IN2
(5V)
Common
+V
CC
Offset
(zero)
Adjust
16mA
Span
4mA
Span
Span
Adjust
Source
Sense
Source
Resistor
Gate
Drive
PRECISION VOLTAGE-TO-CURRENT
CONVERTER/TRANSMITTER
XTR110
SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1984-2009, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
www.ti.com
XTR110
2
SBOS141C
www.ti.com
PIN CONFIGURATION
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Source Resistor
Common
V
REF
In
V
IN1
(10V)
V
IN2
(5V)
Zero Adjust
Zero Adjust
Span Adjust
+V
CC
V
REF
Force
Gate Drive
Source Sense
V
REF
Sense
V
REF
Adjust
4mA Span
16mA Span
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
Power Supply, +V
CC
............................................................................ 40V
Input Voltage, V
IN1
, V
IN2
, V
REF IN
....................................................... +V
CC
See text regarding safe negative input voltage range.
Storage Temperature Range: A, B ................................–55°C to +125°C
K, U ..................................–40°C to +85°C
Output Short-Circuit Duration, Gate Drive
and V
REF
Force ................................ Continuous to common and +V
CC
Output Current Using Internal 50Ω Resistor ................................... 40mA
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments
recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation proce-
dures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE TEMPERATURE
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE
XTR110AG DIP-16 Ceramic JD –40°C to +85°C
XTR110BG DIP-16 Ceramic JD –40°C to +85°C
XTR110KP DIP-16 Plastic N 0°C to +70°C
XTR110KU SOL-16 Surface-Mount DW 0°C to +70°C
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
PACKAGE/ORDERING INFORMATION
(1)
XTR110
3
SBOS141C
www.ti.com
XTR110AG, KP, KU XTR110BG
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
TRANSMITTER
Transfer Function
Input Range: V
IN1
(5)
Specified Performance 0 +10 * * V
V
IN2
Specified Performance 0 +5 * * V
Current, I
O
Specified Performance
(1)
420* *mA
Derated Performance
(1)
040* *mA
Nonlinearity 16mA/20mA Span
(2)
0.01 0.025 0.002 0.005 % of Span
Offset Current, I
OS
I
O
= 4mA
(1)
Initial
(1)
0.2 0.4 0.02 0.1 % of Span
vs Temperature
(1)
0.0003 0.005 * 0.003 % of Span/°C
vs Supply, V
CC
(1)
0.0005 0.005 * * % of Span/V
Span Error I
O
= 20mA
Initial
(1)
0.3 0.6 0.05 0.2 % of Span
vs Temperature
(1)
0.0025 0.005 0.0009 0.003 % of Span/°C
vs Supply, V
CC
(1)
0.003 0.005 * * % of Span/V
Output Resistance From Drain of FET (Q
EXT
)
(3)
10 x 10
9
* Ω
Input Resistance V
IN1
27 * kΩ
V
IN2
22 * kΩ
V
REF
In 19 * kΩ
Dynamic Response
Settling Time To 0.1% of Span 15 * µs
To 0.01% of Span 20 * µs
Slew Rate 1.3 * mA/µs
VOLTAGE REFERENCE
Output Voltage +9.95 +10 +10.05 +9.98 * +10.02 V
vs Temperature 35 50 15 30 ppm/°C
vs Supply, V
CC
Line Regulation 0.0002 0.005 * * %/V
vs Output Current Load Regulation 0.0005 0.01 * * %/mA
vs Time 100 * ppm/1k hrs
Trim Range –0.100 +0.25 * * V
Output Current Specified Performance 10 * mA
POWER SUPPLY
Input Voltage, V
CC
+13.5 +40 * * V
Quiescent Current Excluding I
O
3 4.5 * * mA
TEMPERATURE RANGE
Specification: AG, BG –40 +85 * * °C
KP, KU 0 +70 °C
Operating: AG, BG –55 +125 * * °C
KP, KU –25 +85 °C
ELECTRICAL CHARACTERISTICS
At T
A
= +25°C and V
CC
= +24V and R
L
= 250Ω**, unless otherwise specified.
I
O
= 10 [(V
REF
In/16) + (V
IN1
/4) + (V
IN2
/2)] /R
SPAN
* Specifications same as AG/KP grades. ** Specifications apply to the range of R
L
shown in Typical Performance Curves.
NOTES: (1) Including internal reference. (2) Span is the change in output current resulting from a full-scale change in input voltage. (3) Within compliance range limited
by (+V
CC
– 2V) +V
DS
required for linear operation of the FET. (4) For V
REF
adjustment circuit see Figure 3. (5) For extended I
REF
drive circuit see Figure 4. (5) Unit may
be damaged. See
Input Voltage Range
section.
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