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4N26

Part # 4N26
Description OPTOCOUPL DC-IN 1CH TRANS W/BASE DC-OUT 6PDIP - Rail/Tube
Category IC
Availability In Stock
Qty 159
Qty Price
1 + $0.08001
Manufacturer Available Qty
Motorola Corp
Date Code: 7913
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QTC
Date Code: 0016
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QUALITY TECHNOLOGIES
Date Code: 8848
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
Motorola Optoelectronics Device Data
The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
INPUT LED
Reverse Voltage V
R
3 Volts
Forward Current — Continuous I
F
60 mA
LED Power Dissipation @ T
A
= 25°C
with Negligible Power in Output Detector
Derate above 25°C
P
D
120
1.41
mW
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage V
CEO
30 Volts
Emitter–Collector Voltage V
ECO
7 Volts
Collector–Base Voltage V
CBO
70 Volts
Collector Current — Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C
with Negligible Power in Input LED
Derate above 25°C
P
D
150
1.76
mW
mW/°C
TOTAL DEVICE
Isolation Surge Voltage
(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V
ISO
7500 Vac(pk)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
Ambient Operating Temperature Range
(2)
T
A
55 to +100 °C
Storage Temperature Range
(2)
T
stg
55 to +150 °C
Soldering Temperature (10 sec, 1/16 from case) T
L
260 °C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
Order this document
by 4N25/D
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
*Motorola Preferred Devices
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1
2
3
6
5
4
[CTR = 20% Min]
[CTR = 10% Min]
STANDARD THRU HOLE
CASE 730A–04
STYLE 1 PLASTIC
6
1
Motorola, Inc. 1995
REV 5
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(1)
Characteristic Symbol Min Typ
(1)
Max Unit
INPUT LED
Forward Voltage (I
F
= 10 mA) T
A
= 25°C
T
A
= –55°C
T
A
= 100°C
V
F
1.15
1.3
1.05
1.5
Volts
Reverse Leakage Current (V
R
= 3 V) I
R
100 µA
Capacitance (V = 0 V, f = 1 MHz) C
J
18 pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current 4N25,25A,26,27
(V
CE
= 10 V, T
A
= 25°C 4N28
I
CEO
1
1
50
100
nA
(V
CE
= 10 V, T
A
= 100°C) All Devices I
CEO
1 µA
Collector–Base Dark Current (V
CB
= 10 V) I
CBO
0.2 nA
Collector–Emitter Breakdown Voltage (I
C
= 1 mA) V
(BR)CEO
30 45 Volts
Collector–Base Breakdown Voltage (I
C
= 100 µA) V
(BR)CBO
70 100 Volts
Emitter–Collector Breakdown Voltage (I
E
= 100 µA) V
(BR)ECO
7 7.8 Volts
DC Current Gain (I
C
= 2 mA, V
CE
= 5 V) h
FE
500
Collector–Emitter Capacitance (f = 1 MHz, V
CE
= 0) C
CE
7 pF
Collector–Base Capacitance (f = 1 MHz, V
CB
= 0) C
CB
19 pF
Emitter–Base Capacitance (f = 1 MHz, V
EB
= 0) C
EB
9 pF
COUPLED
Output Collector Current (I
F
= 10 mA, V
CE
= 10 V)
4N25,25A,26
4N27,28
I
C
(CTR)
(2)
2 (20)
1 (10)
7 (70)
5 (50)
mA (%)
Collector–Emitter Saturation Voltage (I
C
= 2 mA, I
F
= 50 mA) V
CE(sat)
0.15 0.5 Volts
Turn–On Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100 )
(3)
t
on
2.8 µs
Turn–Off Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100 )
(3)
t
off
4.5 µs
Rise Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100 )
(3)
t
r
1.2 µs
Fall Time (I
F
= 10 mA, V
CC
= 10 V, R
L
= 100 )
(3)
t
f
1.3 µs
Isolation Voltage (f = 60 Hz, t = 1 sec)
(4)
V
ISO
7500 Vac(pk)
Isolation Resistance (V = 500 V)
(4)
R
ISO
10
11
Isolation Capacitance (V = 0 V, f = 1 MHz)
(4)
C
ISO
0.2 pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
3
Motorola Optoelectronics Device Data
I
C
, OUTPUT COLLECTOR CURRENT (NORMALIZED)
TYPICAL CHARACTERISTICS
Figure 1. LED Forward Voltage versus Forward Current
2
1.8
1.6
1.4
1.2
1
1
10 100 1000
10
1
0.1
0.01 0.5 1
I
F
, LED FORWARD CURRENT (mA)
2 5 10 20 50
I
F
, LED INPUT CURRENT (mA)
V
F
, FORWARD VOLTAGE (VOLTS)
25
°
C
100
°
C
T
A
= –55
°
C
NORMALIZED TO:
I
F
= 10 mA
Figure 2. Output Current versus Input Current
PULSE ONLY
PULSE OR DC
10
7
5
2
1
0.7
0.5
0.2
0.1
–60 –40 –20 0 20 40 60 80 100
T
A
, AMBIENT TEMPERATURE (
°
C)
I
C
, OUTPUT COLLECTOR CURRENT (NORMALIZED)
1
10
100
0.1
0 20 40 60 80 100
T
A
, AMBIENT TEMPERATURE (
°
C)
t, TIME ( s)
I
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
I
F
, LED INPUT CURRENT (mA)
CEO
, COLLECTOR–EMITTER DARK CURRENT
(NORMALIZED)
µ
V
CE
= 30 V
10 V
t
f
t
r
t
r
t
f
0
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
4
8
12
16
20
24
28
5 mA
2 mA
1 mA
0 1 2 3 4 5 6 7 8 9 10
Figure 3. Collector Current versus
Collector–Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall Times
(Typical Values)
I
F
= 10 mA
NORMALIZED TO T
A
= 25
°
C
NORMALIZED TO:
V
CE
= 10 V
T
A
= 25
°
C
V
CC
= 10 V
R
L
= 1000
R
L
= 100
{
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