CHM4301PAPT
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 40 Volts CURRENT 20 Ampere
APPLICATION
FEATURE
* Super high density cell design for extremely low RDS(ON).
CONSTRUCTION
* P-Channel Enhancement
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
2007-06
* High power and current handing capability.
CIRCUIT
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol
Parameter
CHM4301PAPT
Units
V
DSS
Drain-Source Voltage -40 V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Maximum Drain Current - Continuous
A
- Pulsed
P
D
Maximum Power Dissipation
31 W
T
STG
Storage Temperature Range
-55 to 150
°C
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient 50
-20
°C/W
(Note 3)
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
S
D
G
2
1
3
-80
* Small flat package. ( TO-252A )
T
J
Operating Temperature Range
-55 to 150
°C
3. Repetitive Rating , Pulse width linited by maximum junction temperature
(Note 1)
4. Guaranteed by design , not subject to production trsting
TO-252A
TO-252A
Dimensions in inches and (millimeters)
.220 (5.59)
.195 (4.95)
.417 (10.6)
.346 (8.80)
1 Gate
3 Drain( Heat Sink )
2 Source
.280 (7.10)
.238 (6.05)
.261 (6.63)
.213 (5.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
.024 (0.61)
.016 (0.40)
(3) (2)(1)