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PI49FCT3805DQE

Part # PI49FCT3805DQE
Description Clock Fanout Buffer 10-OUT20-Pin QSOP
Category IC
Availability In Stock
Qty 9
Qty Price
1 + $0.48923
Manufacturer Available Qty
PERICOM
Date Code: 0818
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
PS8492C 09/08/04
Block Diagram
PI49FCT3805D/E
3.3V, 2 x 1:5 CMOS Clock Driver
Description
Pericom Semiconductors PI49FCT3805D/E is composed of
non-inverting drivers. The outputs are congured into 2 groups of
one-in, ve-out with independent output enable. Group B has an
extra MON output. Excellent output signals to power and ground
ratio minimize power and ground noise and also improves output
performance.
Features
Low output skew: <200ps
Switching frequency up to 166 MHz
Fast output rise/fall time: <1.0ns
Low propagation delay: <2.5ns
Low input capacitance: <6.0pF
Balanced CMOS outputs
Industrial Temperature: –40°C to +85°C
3.3V ±10% operation, 5V Input Tolerant
Packaging (Pb-free & Green available):
– 20-pin 300-mil wide SOIC (S)
– 20-pin 150-mil wide QSOP (Q)
– 20-pin 209-mil wide SSOP (H)
– 20-pin 173-mil wide TSSOP (L)
Pin Description
Pin Name Deescription
OE
X
Hi-Z State Output Enable Inputs (Active Low)
IN
X
Clock Inputs
OA
N
, OB
N
Clock Outputs
MON Monitor Output
GND Ground
V
CC
Power
Truth Table
(1)
Inputs Outputs
OE
X
IN
X
OA
X
MON
L L L L
L H H H
H L Z L
H H Z H
Note:
1. H = High Voltage Level, L = Low Voltage Level,
Z = High Impedance
Pin Conguration
V
CCB
V
CC
1 2
0
OB0OA0 2 19
OB1OA1 3 18
GNDB
OA2 4 17
OB2
GNDA 5 16
OB3OA3 6 15
OB4OA4 7 14
MONGNDQ 8 13
OEBOEA 9 12
INBINA 10 11
OE
B
IN
A
OA
0Ð4
IN
B
OE
A
OB
0Ð4
MON
5
5
2
PS8492C 09/08/04
PI49FCT3805D/E
3.3V, 2 x 1:5 CMOS Clock Driver
Storage Temperature ................................................................. –65°C to +150°C
Ambient Temperature with Power Applied ................................ –40°C to +85°C
Input Voltage to GND Potential (Inputs & V
CC
Only) .................. –0.5V to 5.5V
Output Voltage to GND Potential (Outputs & I/O Only)...–0.5V to +V
CC
+0.5V
V
CC
Input Voltage........................................................................ –0.5V to +4.6V
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specication
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Notes:
1. For Max. or Min. conditions, use appropriate value specied under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, +25°C ambient and maximum loading.
3. V
OH
= V
CC
– 0.6V at rated current.
4. This parameter is determined by device characterization but is not production tested.
5. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
DC Electrical Characteristics (T
A
= –40°C to +85°C, V
CC
= 3.3V ± 0.3V)
Symbol Parameters Test Conditions
(1)
Min. Typ. Max. Units
V
OH
Output High Voltage
V
CC
= Min.,
V
IN
= V
IL
or V
IH
I
OH
= -0.1mA
I
OH
= -8mA
I
OH
= -12mA
V
CC
-0.2
2.4
(3)
2.4
(3)
-
3.0
3.0
V
V
OL
Output Low Voltage
V
CC
= Min.,
V
IN
= V
IL
or V
IH
I
OH
= 0.1mA
I
OH
= 8mA
I
OH
= 12mA
-
0.2
0.3
0.2
0.4
0.4
V
IH
Input High Voltage Low Logic 2.0 5.5
V
IL
Input Low Voltage High Logic -0.5 0.8
I
IH
Input High Current V
CC
= Max., V
IN
= 5.5V 1
µA
I
IL
Input Low Current V
CC
= Max., V
IN
= GND -1
I
OZH
I
OZL
High Impedance
output current
V
CC
= Max., all
outputs disabled
V
OUT
= V
CC
V
OUT
= GND
1
-1
V
IK
Clamp Diode Voltage V
CC
= Min., I
IN
= -18mA -0.7 -1.2 V
I
ODH
Output High Current
(4, 5)
V
OUT
= 1.5V, V
IN
= V
IL
or V
IH
, V
CC
= 3.3V -40 -74 -100
mAI
ODL
Output Low Current
(4, 5)
V
OUT
= 1.5V, V
IN
= V
IL
or V
IH
, V
CC
= 3.3V 50 90 130
I
OS
Short Circuit Current
(4, 5)
V
CC
= Max., V
OUT
= GND -60 -100 -120
3
PS8492C 09/08/04
PI49FCT3805D/E
3.3V, 2 x 1:5 CMOS Clock Driver
Notes:
1. For Max. or Min. conditions, use appropriate value specied under Electrical Characteristics for the applicable device.
2. Typical values are at V
CC
= 3.3V, +25°C ambient.
3. Per TTL driven input (V
IN
= V
CC
– 0.6V); all other inputs at V
CC
or GND.
Note:
1. This parameter is determined by device characterization but is not production tested.
Capacitance (T
A
= 25°C, f = 1 MHz)
Parameters
(1)
Description Test Conditions Typ Max. Units
C
IN
Input Capacitance V
IN
= 0V 3.0 4
pF
C
OUT
Output Capacitance V
OUT
= 0V 6
Power Supply Characteristics
Parameters Description Test Conditions
(1)
Min. Typ.
(2)
Max. Units
I
CC
Quiescent Power
Supply Current
V
CC
= Max. V
IN
= GND or V
DD
0.1 30
µA
I
DD
Dynamic Supply
Current per Output
V
CC
= 3.6V,
C
L
= 15pF,
All Outputs Toggling
80 120
I
C
Total Power Supply
Current
V
CC
= 3.6V,
C
L
= 15pF,
All Outputs Toggling,
f
i
= 133 MHz
V
IN
= V
CC
or GND 100 135
mA/
MHz
V
IN
= V
CC
-0.6V or GND 100 135
V
CC
= 3.6V,
C
L
= 15pF,
All Outputs Toggling,
f
i
= 166 MHz
V
IN
= V
CC
or GND 120 160
V
IN
= V
CC
-0.6V or GND 120 160
∆I
CC
Supply Current per
inputs @ TTL High
V
CC
= Max. V
IN
= V
CC
-0.6V
(3)
45 300 µA
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