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ZXTD4591E6TA

Part # ZXTD4591E6TA
Description ZETEX SOT236 DUAL 3K - Tape and Reel
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

ISSUE 1 - JULY 2000
ZXTD4591E6
NPN
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
80 V I
C
=100A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
60 V I
C
=10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
5VI
E
=100A
Collector Cut-Off Current I
CBO
100 nA V
CB
=60V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector Emitter Cut-Off Current I
CES
100 nA V
CES
=60V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter Saturation Voltage V
BE(sat)
1.1 V I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On Voltage V
BE(on)
1.0 V I
C
=1A, V
CE
=5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
10 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
4
ISSUE 1 - JULY 2000
ZXTD4591E6
NPN TYPICAL CHARACTERISTICS
5
V
CE(sat)
-(V)
10A1A10mA 100mA
1mA
-55 ° C
+25 ° C
+100 ° C
I
C/IB=10
VCE(sat) vIC
IC-Collector Current
IC-Collector Current
VBE(sat) vIC
V
BE(sat)
-(V)
0
0.2
100mA10mA
0.4
0.6
0.8
1.2
1.0
1.4
10A1A
hFE VIC
IC-Collector Current
1mA
100mA10mA 10A1A
h
FE
- Typical Gain
60
0
180
120
300
10mA
1mA
I
C-Collector Current
VBE(on) vIC
100mA 1A
10A
V
BE(on)
-(V)
0.6
0.8
1.0
1.2
0.4
0.2
0
I
C-Collector Current
VCE(sat) vIC
V
CE(sat)
-(V)
1mA
0
0.1
100mA10mA
+25 ° C
0.2
0.3
0.4
IC/IB=50
10A1A
0.4
+100 ° C
-55 ° C
+25 ° C
+100 ° C
-55 ° C
+25 ° C
-55 °C
+25 ° C
+100 ° C
I
C/IB=10VCE=5V
V
CE=5V
I
C
-Collector Current (A)
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1 10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0
0.1
0.3
0.2
1mA
0.01
IC/IB=10
0.5
0.6
0.5
0.6
240
0.001
ISSUE 1 - JULY 2000
ZXTD4591E6
PNP TYPICAL CHARACTERISTICS
V
CE(sat)
-(V)
10A1A10mA 100mA
1mA
-55 °C
+25 °C
+100 °C
I
C/IB=10
VCE(sat) vIC
I
C
-Collector Current
I
C
-Collector Current
VBE(sat) vIC
V
BE(sat)
-(V)
0
0.2
100mA10mA
0.4
0.6
0.8
1.0
10A1A
hFE VIC
I
C
-Collector Current
1mA 100mA10mA 10A1A
h
FE
-TypicalGain
100
0
300
200
400
10mA
1mA
IC-Collector Current
VBE(on) vIC
100mA 1A 10A
V
BE(on)
-(V)
0.6
0.8
1.0
1.2
0.4
0.2
0
I
C
-Collector Current
VCE(sat) vIC
V
CE(sat)
-(V)
1mA
0
0.1
100mA10mA
+25 ° C
0.2
0.3
0.4
0.5
IC/IB=10
10A1A
+100 °C
-55 °C
+25 °C
+100 °C
-55 °C
+25 °C
-55 °C
+25 °C
+100 °C
I
C/IB=10
V
CE=5V
V
CE=5V
I
C
-Collector Current (A)
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1V 10V 100V
1s
DC
100ms
10ms
100us
1ms
1V
0
1mA
0.01
IC/IB=50
0.6
0.1
0.2
0.3
0.4
0.5
0.6
6
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