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ZL2005PALRFT

Part # ZL2005PALRFT
Description IC REG CNTRLR BUCK PWM 36-QFN
Category IC
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Zilker Labs
Date Code: 1010
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Date Code: 1010
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

25
FN6849.3
December 16, 2011
Next, calculate the switching time using:
gdr
g
sw
I
Q
t =
(20)
where Q
g
is the gate charge of the selected QH and
I
gdr
is the peak gate drive current available from the
ZL2005P.
Although the ZL2005P has a typica
l gate drive current
of 3 A, use the minimum guaranteed current of 2 A for
a conservative design. Using the calculated switching
time, calculate the switching power loss in QH using
(21)
swOUTswINMswtop
fItVP ×××=
The total power dissipated by QH is given by the fol-
lowing equation:
swtopQHQHtot
PPP +=
(22)
MOSFET Thermal Check
Once the power dissipations for QH and QL have been
calculated, the M
OSFET’s junction temperature can
be estimated. Using the junction-to-case thermal resis-
tance (R
th
) given in the MOSFET manufacturer’s data-
sheet and the expected maximum printed circuit board
tempera
ture, calculate the junction temperature as fol-
lows:
(23)
thQpcbj RPTT ×+=max
Current Sensing Components
Once the current sense method has
been selected
(Refer to Section 5.9, “Current Limit Threshold Selec-
tion,” ), the procedure to select the
component is the
following:
When using the inductor DCR sensing method, the
us
er must also select an R/C network comprised of R1
and CL (see Figure 17).
Figure 17. DCR Current Sensing
These components should be sele
cted according to the
following equation:
τ
RC
= L / DCR-------------------------- (24)
R1 should be in the range of 500 Ω
to 5 kΩ in order to
minimize the power dissipation through it. The user
should make sure the resistor package size is appropri-
ate for the power dissipated. Once
R1 has been calcu-
lated, the value of R2 should be
selected based on the
following equation:
R2 = 5 x R1 ------
-----------------------(25)
If R
DS(ON)
is being used the external low side MOS-
FET will act as the sensing element as indicated in
Figure 18.
5.9 Current Limit Threshold Selection
It is recommended that the user include a current limit-
ing mechanism in their design to protect the
power
supply from damage and prevent excessive current
from being drawn from the input supply in the event
that the output is shorted to ground or an overload con-
dition is imposed on the output. Current limiting is
acco
mplished by sensing the current flowing through
the circuit during a portion of the duty cycle.
Output current sensing can be accomplished by mea-
suring the voltage across a serie
s resistive sensing ele-
ment according to equation 26.
V
LIM
= I
LIM
x R
SENSE
---------- -------(26)
Where:
I
LIM
is the desired maximum current that should
flow in the circuit
R
SENSE
is the resistance of the sensing element
V
LIM
is the voltage across the sensing element at
the point the circuit should start limiting the out-
put current.
GH
GL
ISENA
ZL
ISENB
SW
V
IN
CL
V
OUT
R1
R2
ZL2005P
26
FN6849.3
December 16, 2011
The ZL2005P supports “lossless” current sensing, by
measuring the voltage across a resistive element that is
already present in the circuit. This eliminates addi-
tional efficiency losses incurred by devices that must
us
e an additional series resistance in the circuit.
To set the current limit threshold, the user must first
select a cu
rrent sensing method. The ZL2005P incor-
porates two methods for current sensing, synchronous
MOSF
ET R
DS(ON)
sensing and inductor DC resistance
(DCR) sensing; Figure 18 shows a simplified sche-
matic for each method.
V
IN
V
OUT
GH
GL
ISENA
ZL
ISENB
SW
Inductor DCR Sensing
V
IN
V
OUT
GH
GL
ISENA
ZL
ISENB
SW
MOSFET R
DS,ON
Sensing
Figure 18. Current Sensing Methods
The current sensing method can
be selected using the
ILIM1 pin using Table 20. The ILIM0 pin must have a
finite resistor connected to ground in order for
Table 20 to be valid. If no resistor is connected
between ILIM0 and ground, the default method is
MOSFE
T R
DS(ON)
sensing. The current sensing
method can be modified via the I
2
C/SMBus interface.
Please refer to Application note AN2013 for details
.
In addition to selecting the current sensing method, the
ZL2005P gives the power supply designer several
choices for the fault response during over or under
current condition. The user can select the number of
violations allowed before declaring fault, a blanking
time and the action taken when a fault is detected.
The blanking time represents the
time when no current
measurement is taken. This is to avoid taking a reading
just after a current load step (Less accurate due to
potential ringing). It is a configurable parameter.
Table 20 includes default parameters for the
number of
violations and the blanking time using pin-strap.
Table 20. Current Sensing Method Selection
ILIM0 Pin
1
ILIM1 Pin Current Limiting Configuration
Number of
Violations Allowed
2
Comments
R
ILIM0
LOW
Ground-referenced (R
DS,ON
) sensing
Blanking time: 672 ns
4
Best for low duty
cycle and low f
SW
R
ILIM0
OPEN
Output-referenced, down-slope sensing
(Inductor DCR sensing)
Blanking time: 352 ns
4
Best for low duty
cycle and high f
SW
R
ILIM0
HIGH
Output-referenced, up-slope sensing
(Inductor DCR sensing)
Blanking time: 352 ns
4
Best for high duty
cycle
Resistor Depends on resistor value used; see Table 21
NOTES:
1. 10 kΩ < R
ILIM0
< 100 kΩ
2. The number of violations allowed prior to issuing a fault response.
ZL2005P
27
FN6849.3
December 16, 2011
Once the sensing method has been selected, the user
must select the voltage threshold (V
LIM
) based on
equation 26, the desired current limit threshold, and
the resistance of the sensing element.
The current limit threshold can be sele
cted by simply
connecting the ILIM0 and ILIM1 pins as shown in
Table 22. The ground-referenced sensing method is
being used in this mode.
Table 22. Current Limit Threshold Voltage
Settings
The threshold voltage can also be selected in 5 mV
in
crements by connecting a resistor, R
LIM0
, between
the ILIM0 pin and ground according to Table 23. This
Table 21. Resistor Configured Current Sensing Method Selection
R
ILIM1
Current Sensing Method
Number of Violations
Allowed
1
10 kΩ
Ground-referenced (R
DS,ON
) sensing
Best for low duty cycle and low f
SW
Blanking time: 672 ns
1
11 kΩ 3
12.1 kΩ 5
13.3 kΩ 7
14.7 kΩ 9
16.2 kΩ 11
17.8 kΩ 13
19.6 kΩ 15
21.5 kΩ
Output-referenced, down-slope sensing (Inductor DCR sensing)
Best for low duty cycle and high f
SW
Blanking time: 352 ns
1
23.7 kΩ 3
26.1 kΩ 5
28.7 kΩ 7
31.6 kΩ 9
34.8 kΩ 11
38.3 kΩ 13
42.2 kΩ 15
46.4 kΩ
Output-referenced, up-slope sensing (Inductor DCR sensing)
Best for high duty cycle
Blanking time: 352 ns
1
51.1 kΩ 3
56.2 kΩ 5
61.9 kΩ 7
68.1 kΩ 9
75 kΩ 11
82.5 kΩ 13
90.9 kΩ 15
NOTES:
1. The number of violations allowed prior to issuing a fault response.
ILIM0
LOW OPEN HIGH
ILIM1
LOW 20 mV 30 mV 40 mV
OPEN 50 mV 60 mV 70 mV
HIGH 80 mV 90 mV 100 mV
ZL2005P
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