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ZL2005PALRFT

Part # ZL2005PALRFT
Description IC REG CNTRLR BUCK PWM 36-QFN
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

22
FN6849.3
December 16, 2011
The switching frequency can also be set to any value
between 200 kHz and 1.4 MHz using the I
2
C/SMBus
interface. The available frequencies are bounded by
the relation f
sw
= 8 MHz/N, (with 6<= N <= 40). See
Application Note AN2013 for details on configuring
the switching frequency using the I
2
C/SMBus inter-
face.
If multiple ZL2005Ps are used together, co
nnecting
the SYNC pins together will force all devices to syn-
chronize to one another. The CFG pin of one device
mu
st have its SYNC pin set as an output and the
remaining devices must have their SYNC pins set as
an input or all devices must be driven by the same
external clock source.
Note: The s
witching frequency read back using the
appropriate PMBus command will differ slightly from
the selected value in Table 17. The difference is due to
hardware quantization.
5.8 Selecting Power Train Components
The ZL2005P is a synchronous buck controller that
uses external MOSFETs, inductor and capacitors to
perform the power conversion process. The proper
selection of the external components is critical for
optimized performance. Zilker Labs offers an online
circuit design and simulation tool, PowerPilot, to
assist designers in this task.
Please visit
www.intersil.com/zilkerlabs/ to access
PowerPilot. For more detailed guidelines regarding
component s
election, please refer to Application Note
AN2011.
To select the appropriate power stage components for
a
set of desired performance goals, the power supply
requirements listed in Table 18 must be known.
Design Trade-offs
The design of a switching regulator power stage
require
s the user to consider trade-offs between cost,
size and performance. For example, size can be opti-
mized at the expense of efficiency. Additionally, cost
ca
n be optimized at the expense of size. For a detailed
description of circuit trade-offs, refer to Application
Note AN2011.
To start a design, select a switching frequency (f
SW
)
based on Table 19. This frequency is a starting point
and may be adjusted as the design progresses.
Table 19. Circuit Design Considerations
200 – 400 kHz Highest Larger
400 – 800 kHz Moderate Smaller
800 – 1400 kHz Lower Smallest
Inductor Selection
The output inductor selection pr
ocess will include sev-
eral trade-offs. A high inductance value will result in a
low
ripple current (I
opp
), which will reduce the output
capacitance requirement and produce a low output rip-
ple voltage, but may also compromise output transient
loa
d performance. Therefore, a balance must be
Table 17. R
SYNC
Resistor Values
f
SW
R
SYNC
f
SW
R
SYNC
200 kHz 10 kΩ 533 kHz 26.1 kΩ
222 kHz 11 kΩ 571 kHz 28.7 kΩ
242 kHz 12.1 kΩ 615 kHz 31.6 kΩ
267 kHz 13.3 kΩ 667 kHz 34.8 kΩ
296 kHz 14.7 kΩ 727 kHz 38.3 kΩ
320 kHz 16.2 kΩ 889 kHz 46.4 kΩ
364 kHz 17.8 kΩ 1000 kHz 51.1 kΩ
400 kHz 19.6 kΩ 1143 kHz 56.2 kΩ
421 kHz 21.5 kΩ 1333 kHz 68.1 kΩ
471 kHz 23.7 kΩ
Table 18. Power Supply Requirements
Example
Parameter Range
Example
Value
Input voltage (V
IN
) 3.0 – 14.0 V 12 V
Output voltage (V
OUT
) 0.6 – 5.0 V 1.2 V
Output current (I
OUT
) 0 to ~25 A 20 A
Output voltage ripple
(V
orip
)
< 3% of
V
OUT
1% of
V
OUT
Output load step (I
ostep
)< Io50% of I
o
Output load step rate 10 A/µS
Allowable output
deviation due to load step
—± 50 mV
Maximum PCB temp. 120°C 85°C
Desired efficiency 85%
Other considerations Various
Optimize
for small
size
Frequency
Range
Efficiency Circuit Size
ZL2005P
23
FN6849.3
December 16, 2011
struck between output ripple and optimal load tran-
sient performance. A good starting point is to sel
ect
the output inductor ripple current (I
opp
) equal to the
expected load transient step magnitude (I
ostep
):
(3)
ostepopp
II =
Now the output inductance can be calculated using the
following equation:
(4)
(
)
oppsw
V
V
OUT
OUT
If
V
L
INM
OUT
×
×
=
1
where V
INM
is the maximum input voltage.
The average inductor current is equal to the maximum
output current.
The peak inductor current (IL
pk
) is cal-
culated using the following equation where I
OUT
is the
maximum output current:
(5)
2
opp
I
OUTpk
IIL +=
Select an inductor rated for the average DC current
with a peak current rating above the peak current com-
puted above.
In over-current or short-circuit conditi
ons, the inductor
may have currents greater than 2X the normal maxi-
mum rated output current. It is desirable to use an
inductor that is not saturated at these conditions to pro-
tect the load and the power supply MOSFETs from
da
maging currents.
Once an inductor is selected,
the DCR and core losses
in the inductor are calculated. Use the DCR specified
in the inductor manufacturer’s datasheet.
2
LrmsLDCR
IDCRP ×=
(6)
I
Lrms
is given by
(7)
12
2
2
opp
I
OUTLrms
II +=
:
where I
OUT
is the maximum output current. Next, cal-
culate the core loss of the selected inductor. Since this
calculation is speci
fic to each inductor and manufac-
turer, refer to the chosen inductor
s datasheet. Add the
core loss and the DCR loss and compare the total loss
to the maximum power dissipation recommendation in
the inductor datasheet.
Output Capacitor Selection
Several trade-offs also must be considered when
se
lecting an output capacitor. Low ESR values are
needed to have a small output deviation during tran-
sient load steps (V
osag
) and low output voltage ripple
(V
orip
). However, capacitors with low ESR, such as
semi-stable (X5R and X7R) dielectric ceramic capaci-
tors, also have relatively low capacitance
values.
Many designs can use a combination of high capaci-
tance devices and low ESR devices in parallel.
For high ripple currents, a low capacitance value can
ca
use a significant amount of output voltage ripple.
Likewise, in high transient load steps, a relatively
large amount of capacitance is needed to minimize the
output voltage deviation while the inductor current
ramps up to the new steady state output current value.
As a starting point, allocate o
ne-half of the output volt-
age ripple to the capacitor ESR and the
other half to its
capacitance, as shown in the following equations:
2
8
orip
V
sw
opp
OUT
f
I
C
××
=
(8)
(9)
opp
orip
I
V
ESR
×
=
2
Use these values to make an initial capacitor selection,
using a single capacitor or several capacitors in paral-
lel.
After a capacitor has been selected, the resulting out-
put voltage ripple can be calculated using the follow-
ing equation:
(10)
OUTsw
opp
opporip
Cf
I
ESRIV
××
+×=
8
Because each part of this equation was made to be less
than or equal to half of the allowed output ripple volt-
age, the V
orip
should be less than the desired maximum
output ripple.
For more information on the
performance of the power
supply in response to a transient load, refer to Applica-
tion Note AN2011.
ZL2005P
24
FN6849.3
December 16, 2011
Input Capacitor
It is highly recommended that dedicated input
capacitors be used in any point-of-load design, even
when the supply is powered from a heavily filtered 5
or 12 V “bulk” supply. This is because of the high
RMS ripple current that is drawn by the buck
converter topology. This input ripple (I
CINrms
) can be
determined from the following equation:
(11)
()
DDII
OUTCINrms
××= 1
Please refer to Application Note AN2011 for detailed
derivation including efficiency and ripple current.
Without capacitive filtering near the power supply
input circuit, thi
s current would flow through the sup-
ply bus and return planes, coupling noise into other
system
circuitry. The input capacitors should be rated
at 1.2X the ripple current calculated above to avoid
overheating of the capacitors due to the high ripple
current, which can cause premature failure. Ceramic
capacitors with X7R or X5R dielectric with low ESR
and 1.1X the maximum expected input voltage are rec-
ommended.
Bootstrap Circuit Component Selection
The high-side driver boost circuit utilizes an external
Scho
ttky diode (DB) and an external bootstrap capaci-
tor (CB) to supply sufficient gate
drive for the high-
side MOSFET driver. DB should be a 20 mA, 30 V
Schottky diode or equivalent device and CB should be
a 1 µF ceramic type rated for at least 6.3V.
QL Selection
The bottom MOSFET should be selected primarily
ba
sed on the device’s R
DS(ON)
and secondarily based
on its gate charge. To choose QL, use the following
equation and allow 2–5% of the output power to be
dissipated in the R
DS(ON)
of QL (lower output voltages
and higher step-down ratios will be closer to 5%):
OUTOUTQL
IVP ××= 05.0
(12)
Calculate the RMS current in QL as follows:
(13)
DII
Lrmsbotrms
×= 1
Calculate the desired maximum R
DS(ON)
as follows:
(14)
R
DS(ON)
= P
QL
/I
botrms
2
Note that the R
DS(ON)
given in the manufacturers
datasheet is measured at 25°C. The actual R
DS(ON)
in
the end-use application will be much higher. For
example, a Vishay Si7114 MOSFET with a junction
temperature of 125°C has an R
DS(ON)
1.4 times higher
than the value at 25°C.
Select a candidate MOSFET, and calculate the
required gate drive current as
follows:
gswg
QfI
×
=
(15)
Keep in mind that the total allowed gate drive current
for both QH and QL is 80 mA.
MOSFETs with lower R
DS(ON)
tend to have higher
gate charge requirements, which increases the current
and resulting power required to turn them on and off.
Since the MOSFET gate drive circuits are integrated
in the ZL2005P, this power is dissipated in the
ZL2005P according to the following equation:
(16)
INMgswQL
VQfP
×
×
=
QH Selection
In addition to the R
DS(ON)
loss and gate charge loss,
QH also has switching loss. The procedure to select
QH is similar to the procedure for QL. First, assign 2–
5% of the output power to be dissipated in the R
DS(ON)
of QH using the equation for QL above. As was done
with QL, calculate the RMS current as follows:
(17)
DII
Lrmstoprms
×=
Calculate a starting R
DS(ON)
as follows, in this exam-
ple using 5%:
(18)
OUTOUTQH
IVP ×
×
=
05.0
(19)
R
DS(ON)
= P
QH
/ I
toprms
2
Select a MOSFET and calculate the resulting gate
drive current. Verify that the combined gate drive cur-
rent from QL and QH does not exceed 80 mA.
ZL2005P
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