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ZHCS1000TA

Part # ZHCS1000TA
Description ZETEX 1A SCHOTTKY DIO 40V SOT23 3K - Cut TR (SOS)
Category IC
Availability Out of Stock
Qty 0

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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

ZHCS1000
Document number: DS33220 Rev. 3 - 2
1 of 5
www.diodes.com
February 2011
© Diodes Incorporated
ZHCS1000
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Product Summary
• V
R
= 40V
• I
F
= 1A
• I
R
= 50μA
Description and Applications
• DC – DC Converters
• Mobile Telecomms
• PCMIA & SCSI
Features and Benefits
• High current capability (I
F
= 1A)
• Low V
F
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.0089 grams (approximate)
Ordering Information (Note 1)
Device Packaging Shipping
ZHCS1000TA SOT23 3000/Tape & Reel
Notes: 1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
Top View
ZS1 = Product Type Marking Code
SOT23
ZS1
ZHCS1000
Document number: DS33220 Rev. 3 - 2
2 of 5
www.diodes.com
February 2011
© Diodes Incorporated
ZHCS1000
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Continuous Reverse Voltage
V
R
40 V
Continuous Forward Current
I
F
1 A
Forward Voltage @ I
F
= 1A (typ) V
F
425 mV
Average Peak Forward Current; D.C. = 50%
I
FAV
1750 mA
Non Repetitive Forward Current
t
≤ 100
μ
s
I
FSM
12 A
t
≤ 10ms
5.2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, T
A
= 25°C P
D
500 mW
Junction Temperature
T
J
125 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage
V
(
BR
)
R
40 60 - V
I
R
= 300μA
Forward Voltage (Note 2)
V
F
- 240 270
mV
I
F
= 50mA
- 265 290
I
F
= 100mA
- 305 340
I
F
= 250mA
- 355 400
I
F
= 500mA
- 390 450
I
F
= 750mA
- 425 500
I
F
= 1A
- 495 600
I
F
= 1.5A
- 420 -
I
F
= 1A, T
A
= 100°C
Reverse Current
I
R
- 50 100
μA
V
R
= 30V
Diode Capacitance
C
D
- 25 - pF
f = 1MHz, V
R
= 30V
Reverse Recovery Time trr - 12 - ns
Switched from I
F
= 500mA to
I
R
= 500mA
Measured @ I
R
= 50mA
Notes: 2. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.
ZHCS1000
Document number: DS33220 Rev. 3 - 2
3 of 5
www.diodes.com
February 2011
© Diodes Incorporated
ZHCS1000
12NEXT
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