THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
amb
= 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
P
tot
1.25
2
W
W
Derate above 25°C*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
10
16
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single transistor on
Q1 and Q3 on or Q2 and Q4 on equally
100
62.5
°C/ W
°C/ W
ZHB6790
100us
Pulse Width
Transient Thermal Resistance
0
1ms 10ms 100ms 1s 10s 100s
20
40
60
80
100
Transient Thermal Resistance
Pulse Width
1ms100us
0
10ms 1s100ms 10s 100s
10
20
30
40
50
60
T - Temperature (°C)
0
0.5
020
1.5
1.0
2.0
Derating curve
40 60 80 100 140120 160
Single Transistor "On"
Q1 and Q3 or Q2 and Q4 "On"
Pd v Pcb Area Comparison
0.1
0.1
10
Pcb Area (inches squared)
110
1
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs
rurned on.
