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X28C010DI-15

Part # X28C010DI-15
Description 128K X 8 EEPROM,CMOS,CERDIP,IND,150NS
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

X28C010
1
5 Volt, Byte Alterable E
2
PROM
© Xicor, Inc. 1991, 1995, 1996 Patents Pending Characteristics subject to change without notice
3858-3.1 4/3/97 T1/C0/D0 SH
FEATURES
Access Time: 120ns
Simple Byte and Page Write
—Single 5V Supply
—No External High Voltages or V
PP
Control Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Low Power CMOS:
—Active: 50mA
—Standby: 500µA
Software Data Protection
—Protects Data Against System Level
Inadvertant Writes
High Speed Page Write Capability
Highly Reliable Direct Write™ Cell
—Endurance: 100,000 Write Cycles
—Data Retention: 100 Years
Early End of Write Detection
DATA Polling
—Toggle Bit Polling
DESCRIPTION
The Xicor X28C010 is a 128K x 8 E
2
PROM, fabricated
with Xicor's proprietary, high performance, floating gate
CMOS technology. Like all Xicor programmable non-
volatile memories the X28C010 is a 5V only device. The
X28C010 features the JEDEC approved pinout for byte-
wide memories, compatible with industry standard
EPROMs.
The X28C010 supports a 256-byte page write operation,
effectively providing a 19µs/byte write cycle and en-
abling the entire memory to be typically written in less
than 2.5 seconds. The X28C010 also features DATA
Polling and Toggle Bit Polling, system software support
schemes used to indicate the early completion of a write
cycle. In addition, the X28C010 supports Software Data
Protection option.
Xicor E
2
PROMs are designed and tested for applica-
tions requiring extended endurance. Data retention is
specified to be greater than 100 years.
1M X28C010 128K x 8 Bit
PIN CONFIGURATIONS
3858 FHD F02.1
NC
A
16
A
15
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
WE
NC
A
14
A
13
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
X28C010
CERDIP
FLAT PACK
SOIC (R)
X28C010
(TOP VIEW)
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
A
13
A
8
A
9
A
11
A
10
I/O
7
A
14
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
A
12
A
15
A
16
NC
V
CC
WE
NC
232
6
1
5
43
8
7
9
10
11
12
13
15 1716 18 19 20
22
23
24
25
26
27
28
29
31
OE
CE
A
7
14
21
30
X28C010
(TOP VIEW)
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
A
13
A
8
A
9
A
11
A
10
I/O
7
A
14
I/O
1
I/O
2
V
SS
I/O
3
I/O
4
I/O
5
I/O
6
A
12
A
15
A
16
NC
V
CC
WE
NC
232
6
1
5
43
8
7
9
10
11
12
13
15 1716 18 19 20
22
23
24
25
26
27
28
29
31
OE
CE
A
7
14
21
30
3858 FHD F03.1
PLCC
LCC
EXTENDED LCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
X28C010
3858 ILL F21
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
NC
NC
V
SS
NC
NC
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A
11
A
9
A
8
A
13
A
14
NC
NC
NC
WE
V
CC
NC
NC
NC
A
16
A
15
A
12
A
7
A
6
A
5
A
4
TSOP
X28C010
(BOTTOM VIEW)
14
A
0
16
I/O
1
18
V
SS
11
A
3
9
A
5
7
A
7
15
I/O
0
17
I/O
2
19
I/O
3
5
A
15
2
NC
36
V
CC
20
I/O
4
21
I/O
5
34
NC
23
I/O
7
25
A
10
27
A
11
29
A
8
22
I/O
6
32
NC
24
CE
26
OE
28
A
9
30
A
13
13
A
1
12
A
2
10
A
4
8
A
6
4
A
16
3
NC
1
NC
35
WE
33
NC
31
A
14
6
A
12
PGA
3858 FHD F20
2
X28C010
PIN DESCRIPTIONS
Addresses (A
0
–A
16
)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all read/
write operations. When CE is HIGH, power consumption
is reduced.
Output Enable (OE)
The Output Enable input controls the data output buffers
and is used to initiate read operations.
Data In/Data Out (I/O
0
–I/O
7
)
Data is written to or read from the X28C010 through the
I/O pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the
X28C010.
PIN NAMES
Symbol Description
A
0
–A
16
Address Inputs
I/O
0
–I/O
7
Data Input/Output
WE Write Enable
CE Chip Enable
OE Output Enable
V
CC
+5V
V
SS
Ground
NC No Connect
3858 PGM T01
3858 FHD F01
FUNCTIONAL DIAGRAM
X BUFFERS
LATCHES AND
DECODER
I/O BUFFERS
AND LATCHES
Y BUFFERS
LATCHES AND
DECODER
CONTROL
LOGIC AND
TIMING
1M-BIT
E
2
PROM
ARRAY
I/O
0
–I/O
7
DATA INPUTS/OUTPUTS
CE
OE
V
CC
V
SS
A
8
–A
16
WE
A
0
–A
7
X28C010
3
DEVICE OPERATION
Read
Read operations are initiated by both OE and CE LOW.
The read operation is terminated by either CE or OE
returning HIGH. This two line control architecture elimi-
nates bus contention in a system environment. The data
bus will be in a high impedance state when either OE or
CE is HIGH.
Write
Write operations are initiated when both CE and WE are
LOW and OE is HIGH. The X28C010 supports both a
CE and WE controlled write cycle. That is, the address
is latched by the falling edge of either CE or WE, which-
ever occurs last. Similarly, the data is latched internally by
the rising edge of either CE or WE, whichever occurs first.
A byte write operation, once initiated, will automatically
continue to completion, typically within 5ms.
Page Write Operation
The page write feature of the X28C010 allows the entire
memory to be written in 5 seconds. Page write allows
two to two hundred fifty-six bytes of data to be consecu-
tively written to the X28C010 prior to the commence-
ment of the internal programming cycle. The host can
fetch data from another device within the system during
a page write operation (change the source address), but
the page address (A
8
through A
16
) for each subsequent
valid write cycle to the part during this operation must be
the same as the initial page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host
can write an additional one to two hundred fifty six bytes
in the same manner as the first byte was written. Each
successive byte load cycle, started by the WE HIGH to
LOW transition, must begin within 100µs of the falling
edge of the preceding WE. If a subsequent WE HIGH to
LOW transition is not detected within 100µs, the internal
automatic programming cycle will commence. There is
no page write window limitation. Effectively the page
write window is infinitely wide, so long as the host
continues to access the device within the byte load cycle
time of 100µs.
Write Operation Status Bits
The X28C010 provides the user two write operation
status bits. These can be used to optimize a system
write cycle time. The status bits are mapped onto the
I/O bus as shown in Figure 1.
DATA Polling (I/O
7
)
The X28C010 features DATA Polling as a method to
indicate to the host system that the byte write or page
write cycle has completed. DATA Polling allows a simple
bit test operation to determine the status of the X28C010,
eliminating additional interrupt inputs or external hard-
ware. During the internal programming cycle, any at-
tempt to read the last byte written will produce the
complement of that data on I/O
7
(i.e., write data = 0xxx
xxxx, read data = 1xxx xxxx). Once the programming
cycle is complete, I/O
7
will reflect true data. Note: If the
X28C010 is in the protected state and an illegal write
operation is attempted DATA Polling will not operate.
Toggle Bit (I/O
6
)
The X28C010 also provides another method for deter-
mining when the internal write cycle is complete. During
the internal programming cycle, I/O
6
will toggle from
HIGH to LOW and LOW to HIGH on subsequent at-
tempts to read the device. When the internal cycle is
complete the toggling will cease and the device will be
accessible for additional read or write operations.
Figure 1. Status Bit Assignment
5TBDP 43210I/O
RESERVED
TOGGLE BIT
DATA POLLING
3858 FHD F11
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