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TPS51200DRCT

Part # TPS51200DRCT
Description IC, DC/DC CONTROLLER3.5V 10-Pin VSON
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

1
FEATURES APPLICATIONS
DESCRIPTION
STANDARD DDR APPLICATION
2
3
4
5
1
9
8
7
6
10
TPS51200
REFIN
VLDOIN
VO
PGND
VOSNS
VIN
PGOOD
GND
EN
REFOUT
3.3 V
IN
PGOOD
SLP_S3
0.1 mF
VTTREF
VLDOIN
VTT
VDDQ
UDG-08025
TPS51200
SLUS812 FEBRUARY 2008
www.ti.com
SINK/SOURCE DDR TERMINATION REGULATOR
Memory Termination Regulator for DDR,
2
Input Voltage: Supports 2.5-V Rail and 3.3-V
DDR2, DDR3, and Low Power DDR3/DDR4
Rail
Notebook/Desktop/Server
VLDOIN Voltage Range: 1.1 V to 3.5 V
Telecom/Datacom, GSM Base Station,
Sink/Source Termination Regulator Includes
LCD-TV/PDP-TV, Copier/Printer, Set-Top Box
Droop Compensation
Requires Minimum Output Capacitance of
20- µ F (typically 3 × 10- µ F MLCCs) for Memory
The TPS51200 is a sink/source Double Data Rate
Termination Applications (DDR)
(DDR) termination regulator specifically designed for
PGOOD to Monitor Output Regulation
low input voltage, low-cost, low-noise systems where
EN Input
space is a key consideration.
REFIN Input Allows for Flexible Input Tracking
The TPS51200 maintains a fast transient response
Either Directly or Through Resistor Divider
and only requires a minimum output capacitance of
Remote Sensing (VOSNS) 20 µ F. The TPS51200 supports a remote sensing
function and all power requirements for DDR, DDR2,
± 10-mA Buffered Reference (REFOUT)
DDR3, and Low Power DDR3/DDR4 VTT bus
Built-in Soft Start, UVLO and OCL
termination.
Thermal Shutdown
In addition, the TPS51200 provides an open-drain
Meets DDR, DDR2 JEDEC Specifications;
PGOOD signal to monitor the output regulation and
Supports DDR3 and Low-Power DDR3/DDR4
an EN signal that can be used to discharge VTT
VTT Applications
during S3 (suspend to RAM) for DDR applications.
SON-10 PowerPAD™Package
The TPS51200 is available in the thermally-efficient
SON-10 PowerPAD package, and is rated both
Green and Pb-free. It is specified from -40 ° C to
+85 ° C.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2008, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
www.ti.com
ABSOLUTE MAXIMUM RATINGS
(1)
DISSIPATION RATINGS TABLE
(1)
RECOMMENDED OPERATING CONDITIONS
TPS51200
SLUS812 FEBRUARY 2008
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
T
A
PACKAGE DEVICE NUMBER PINS MEDIUM MINIMUM
QUANTITY
TPS51200DRCT 250
40 ° C to 85 ° C DRC Plastic Small Outline 10 Tape and Reel
TPS51200DRCR 3000
Over operating free-air temperature range, unless otherwise noted.
VALUE UNIT
VIN, VLDOIN, VOSNS, REFIN 0.3 to 3.6
Input voltage range
(2)
EN 0.3 to 6.5 V
PGND to GND 0.3 to 0.3
VO, REFOUT 0.3 to 3.6
Output voltage range
(2)
V
PGOOD 0.3 to 6.5
T
stg
Storage temperature 55 to 150 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.
DERATING FACTOR T
A
= 85 ° C
T
A
= 25 ° C
PACKAGE POWER RATING ABOVE T
A
= 25 ° C POWER RATING
10-Pin SON 1.92 W 19 mW/ ° C 0.79 W
(1) PowerPAD size: 3.0 × 1.9 mm, 4 standard thermal vias. Based on the above environment, junction to thermal pad resistance θ
JP
is
10.24 ° C/W. Junction to ambient thermal resistance θ
JA
is 52.06 ° C/W.
PARAMETER MIN TYP MAX UNIT
Supply voltages VIN 2.375 3.500
EN, VLDOIN, VOSNS 0.1 3.5
REFIN 0.5 1.8
V
Voltage range VO, PGOOD 0.1 3.5
REFOUT 0.1 1.8
PGND 0.1 0.1
Operating free-air temperature, T
A
40 85 ° C
2 Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS51200
www.ti.com
ELECTRICAL CHARACTERISTICS
TPS51200
SLUS812 FEBRUARY 2008
Over recommended free-air temperature range, V
VIN
= 3.3 V,V
VLDOIN
= 1.8 V, V
REFIN
= 0.9 V, V
VOSNS
= 0.9 V, V
EN
= V
VIN
, C
OUT
= 3 × 10 µ F and circuit shown in Section 1 . (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
I
IN
Supply current T
A
= 25 ° C, V
EN
= 3.3 V, No Load 0.7 1 mA
T
A
= 25 ° C, V
EN
= 0 V, V
REFIN
= 0, No Load 65 80
I
IN(SDN)
Shutdown current µ A
T
A
= 25 ° C, V
EN
= 0 V, V
REFIN
> 0.4 V, No Load 200 400
I
LDOIN
Supply current ofVLDOIN T
A
= 25 ° C, V
EN
= 3.3 V, No Load 1 50 µ A
I
LDOIN(SDN)
Shutdown current of VLDOIN T
A
= 25 ° C, V
EN
= 0 V, No Load 0.1 50 µ A
INPUT CURRENT
I
REFIN
Input current, REFIN V
EN
= 3.3 V 1 µ A
VO OUTPUT
1.25 V
V
REFOUT
= 1.25 V (DDR1), I
O
= 0 A
15 15 mV
0.9 V
V
VOSNS
Output DC voltage, VO V
REFOUT
= 0.9 V (DDR2), I
O
= 0 A
15 15 mV
0.75 V
V
LDOIN
= 1.5 V, V
REFOUT
= 0.75 V (DDR3), I
O
= 0 A
15 15 mV
Output voltage tolerance to
V
VOTOL
2A < I
VO
< 2A 25 25 mV
REFOUT
I
VOSRCL
VO source vurrent Limit With reference to REFOUT, V
OSNS
= 90% × V
REFOUT
3 4.5 A
I
VOSNCL
VO sink current Limit With reference to REFOUT, V
OSNS
= 110% × V
REFOUT
3.5 5.5 A
I
DSCHRG
Discharge current, VO V
REFIN
= 0 V, V
VO
= 0.3 V, V
EN
= 0 V, T
A
= 25 ° C 18 25
POWERGOOD COMPARATOR
PGOOD window lower threshold with respect to REFOUT 23.5% 20% 17.5%
V
TH(PG)
VO PGOOD threshold PGOOD window upper threshold with respect to REFOUT 17.5% 20% 23.5%
PGOOD hysteresis 5%
T
PGSTUPDLY
PGOOD startup delay Startup rising edge, VOSNS within 15% of REFOUT 2 ms
V
PGOODLOW
Output low voltage I
SINK
= 4 mA 0.4 V
T
PBADDLY
PGOOD bad delay VOSNS is outside of the ± 20% PGOOD window 10 µ s
V
OSNS
= V
REFIN
(PGOOD high impedance),
I
PGOODLK
Leakage current
(1)
1 µ A
PGOOD = V
IN
+ 0.2 V
REFIN AND REFOUT
V
REFIN
REFIN voltage range 0.5 1.8 V
V
REFINUVLO
REFIN undervoltage lockout REFIN rising 360 390 420 mV
REFIN undervoltage lockout
V
REFINUVHYS
20 mV
hysteresis
V
REFOUT
REFOUT voltage REFIN V
10 mA < I
REFOUT
< 10 mA, V
REFIN
= 1.25 V 15 15
10 mA < I
REFOUT
< 10 mA, V
VREFIN
= 0.9 V 15 15 mV
REFOUT voltage tolerance to
V
REFOUTTOL
V
REFIN
10 mA < I
REFOUT
< 10 mA, V
REFIN
= 0.75V 15 15
10 mA < I
REFOUT
< 10 mA, V
REFIN
= 0.6 V 15 15
I
REFOUTSRCL
REFOUT source current limit V
REFOUT
= 0 V 10 40 mA
I
REFOUTSNCL
REFOUT sink current limit V
REFOUT
= 0 V 10 40 mA
(1) Ensured by design. Not production tested.
Copyright © 2008, Texas Instruments Incorporated 3
Product Folder Link(s): TPS51200
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