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TMS320VC5509APGE

Part # TMS320VC5509APGE
Description FIXED POINT DIGITAL SIGNAL PROCESSOR -DSP, 32 BIT, 200MHZ
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Electrical Specifications
94
November 2002 − Revised January 2005SPRS205D
Setup = 2 Strobe = 5 Not Ready = 2
Hold
= 1
Extended
Hold = 2
CLKOUT
CEx
BEx
A[20:0]
§
D[15:0]
AOE
ARE
AWE
ARDY
M5
M7
M6
M8
M9 M10
M1
M2
M12
M14
M11
M13
M3
M4
M3
M4
CLKOUT is equal to CPU clock
CEx becomes active depending on the memory address space being accessed
§
A[13:0] for LQFP
Figure 5−6. Asynchronous Memory Read Timings
Electrical Specifications
95
November 2002 − Revised January 2005 SPRS205D
Setup = 2 Strobe = 5 Not Ready = 2 Hold = 1
Extended
Hold = 2
M17
C
LKOUT
CEx
BEx
A[20:0]
§
D[15:0]
AOE
ARE
AWE
ARDY
M3
M4
M7
M6
M8
M9
M10
M18
M3
M4
M15
M16
M5
CLKOUT is equal to CPU clock
CEx becomes active depending on the memory address space being accessed
§
A[13:0] for LQFP
Figure 5−7. Asynchronous Memory Write Timings
Electrical Specifications
96
November 2002 − Revised January 2005SPRS205D
5.7.2 Synchronous DRAM (SDRAM) Timings
Table 5−9 and Table 5−10 assume testing over recommended operating conditions (see Figure 5−8 through
Figure 5−14).
Table 5−9. Synchronous DRAM Cycle Timing Requirements
NO.
CV
DD
= 1.2 V
CV
DD
= 1.35 V
CV
DD
= 1.6 V
UNIT
NO.
MIN MAX MIN MAX
UNIT
M19 t
su(DV-CLKMEMH)
Setup time, read data valid before CLKMEM high 3 3 ns
M20 t
h(CLKMEMH-DV)
Hold time, read data valid after CLKMEM high 2 2 ns
M21 t
c(CLKMEM)
Cycle time, CLKMEM 9.26
7.52
ns
Maximum SDRAM operating frequency = 108 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC board
design and the memory chip timing requirement.
Maximum SDRAM operating frequency = 133 MHz. Actual attainable maximum operating frequency will depend on the quality of the PC board
design and the memory chip timing requirement.
Table 5−10. Synchronous DRAM Cycle Switching Characteristics
NO.
PARAMETER
CV
DD
= 1.2 V
CV
DD
= 1.35 V
CV
DD
= 1.6 V
UNIT
NO.
PARAMETER
MIN MAX MIN MAX
UNIT
M22 t
d(CLKMEMH-CEL)
Delay time, CLKMEM high to CEx low 1.2 7 1.2 5 ns
M23 t
d(CLKMEMH-CEH)
Delay time, CLKMEM high to CEx high 1.2 7 1.2 5 ns
M24 t
d(CLKMEMH-BEV)
Delay time, CLKMEM high to BEx valid 1.2 7 1.2 5 ns
M25 t
d(CLKMEMH-BEIV)
Delay time, CLKMEM high to BEx invalid 1.2 7 1.2 5 ns
M26 t
d(CLKMEMH-AV)
Delay time, CLKMEM high to address valid 1.2 7 1.2 5 ns
M27 t
d(CLKMEMH-AIV)
Delay time, CLKMEM high to address invalid 1.2 7 1.2 5 ns
M28 t
d(CLKMEMH-SDCASL)
Delay time, CLKMEM high to SDCAS low 1.2 7 1.2 5 ns
M29 t
d(CLKMEMH-SDCASH)
Delay time, CLKMEM high to SDCAS high 1.2 7 1.2 5 ns
M30 t
d(CLKMEMH-DV)
Delay time, CLKMEM high to data valid 1.2 7 1.2 5 ns
M31 t
d(CLKMEMH-DIV)
Delay time, CLKMEM high to data invalid 1.2 7 1.2 5 ns
M32 t
d(CLKMEMH-SDWEL)
Delay time, CLKMEM high to SDWE low 1.2 7 1.2 5 ns
M33 t
d(CLKMEMH-SDWEH)
Delay time, CLKMEM high to SDWE high 1.2 7 1.2 5 ns
M34 t
d(CLKMEMH-SDA10V)
Delay time, CLKMEM high to SDA10 valid 1.2 7 1.2 5 ns
M35 t
d(CLKMEMH-SDA10IV)
Delay time, CLKMEM high to SDA10 invalid 1.2 7 1.2 5 ns
M36 t
d(CLKMEMH-SDRASL)
Delay time, CLKMEM high to SDRAS low 1.2 7 1.2 5 ns
M37 t
d(CLKMEMH-SDRASH)
Delay time, CLKMEM high to SDRAS high 1.2 7 1.2 5 ns
M38 t
d(CLKMEMH–CKEL)
Delay time, CLKMEM high to CKE low 1.2 7 1.2 5 ns
M39 t
d(CLKMEMH–CKEH)
Delay time, CLKMEM high to CKE high 1.2 7 1.2 5 ns
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