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TLC374MJ

Part # TLC374MJ
Description Comparator Quad ±8V/16V 14-Pin CDIP - Rail/Tube
Category IC
Availability In Stock
Qty 14
Qty Price
1 - 2 $9.18410
3 - 5 $7.30553
6 - 8 $6.88807
9 - 11 $6.40104
12 + $5.70527
Manufacturer Available Qty
Texas Instruments
Date Code: 9408
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

TLC374, TLC374Q, TLC374Y
LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS
SLCS118C NOVEMBER 1983 REVISED MARCH 1999
10
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
LinCMOS process
LinCMOS process is a linear polysilicon-gate complimentary-MOS process. Primarily designed for single-
supply applications, LinCMOS products facilitate the design of a wide range of high-performance analog
functions from operational amplifiers to complex mixed-mode converters.
While digital designers are experienced with CMOS, MOS technologies are relatively new for analog designers.
This short guide is intended to answer the most frequently asked questions related to the quality and reliability
of LinCMOS products. Further questions should be directed to the nearest TI field sales office.
electrostatic discharge
CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only
for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to
CMOS devices. It can occur when a device is handled without proper consideration for environmental
electrostatic charges, e.g. during board assembly. If a circuit in which one amplifier from a dual operational
amplifier is being used and the unused pins are left open, high voltages tends to develop. If there is no provision
for ESD protection, these voltages may eventually punch through the gate oxide and cause the device to fail.
To prevent voltage buildup, each pin is protected by internal circuitry.
Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more
transistors break down at voltages higher than normal operating voltages but lower than the breakdown voltage
of the input gate. This type of protection scheme is limited by leakage currents which flow through the shunting
transistors during normal operation after an ESD voltage has occurred. Although these currents are small, on
the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as tens of
picoamps.
To overcome this limitation, TI design engineers developed the patented ESD-protection circuit shown in
Figure 4. This circuit can withstand several successive 1-kV ESD pulses, while reducing or eliminating leakage
currents that may be drawn through the input pins. A more detailed discussion of the operation of TIs
ESD-protection circuit is presented on the next page.
All input an output pins of LinCMOS and Advanced LinCMOS products have associated ESD-protection
circuitry that undergoes qualification testing to withstand 1000 V discharged from a 100-pF capacitor through
a 1500- resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor
(charged device model). These tests simulate both operator and machine handling of devices during normal
test and assembly operations.
D1 D2
Q2
R2
D3
Q1
R1
V
DD
To Protected CircuitInput
V
SS
Figure 4. LinCMOS ESD-Protection Schematic
TLC374, TLC374Q, TLC374Y
LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS
SLCS118C NOVEMBER 1983 REVISED MARCH 1999
11
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
Input protection circuit operation
Texas Instruments patented protection circuitry allows for both positive- and negative-going ESD transients.
These transients are characterized by extremely fast rise times and usually low energies, and can occur both
when the device has all pins open and when it is installed in a circuit.
positive ESD transients
Initial positive charged energy is shunted through Q1 to V
SS
. Q1 turns on when the voltage at the input rises
above the voltage on V
DD
by a value equal to the V
EB
of Q1. The base current increases through R2 with input
current as Q1 saturates. The base current through R2 as Q1 saturates forces the voltage at the drain and gate
of Q2 to exceed its threshold level (V
T
22 to 26 V) and turn on Q2. The shunted input current through Q1 to
V
SS
is now shunted through the n-channel enhancement-type MOSFET Q2 to V
SS
. If the voltage on the input
pin continues to rise, the breakdown voltage of d3 is exceeded and all remaining energy is dissipated in R1 and
D3. The breakdown voltage of D3 is designed to be 24 V to 27 V, which is well below the gate oxide voltage of
the circuit to be protected.
negative ESD transients
The negative charged ESD transients are shunted directly through D1. Additional energy is dissipated in R1
and D2 as D2 becomes forward-biased. The voltage seen by the protected circuit is 0.3 V to 1 V (the forward
voltage of D1 and D2).
circuit-design considerations
LinCMOS products are being used in actual circuits environments that have input voltages that exceed the
recommended common-mode input voltage range and activate the input protection circuit. Even under normal
operation, these conditions occur during circuit power up or power down, and in many cases, when the device
is being used for a signal conditioning function. The input voltages can exceed V
ICR
and not damage the device
only if the inputs are current limited. The recommended current limit shown on most product data sheets is
±5 mA. Figures 5 and 6 show typical characteristics for input voltage vs input current.
Normal operation and correct output state can be expected even when the input voltage exceeds the positive
supply voltage. The input current should be externally limited even through internal positive current limiting is
achieved in the input protection circuit by the action of Q1. When Q1 is on, it saturates and limits the current
to approximately 5-mA collector current by design. When saturated, Q1 base current increases with input
current. This current is forced into the V
DD
pin and into the device I
DD
or the V
DD
supply through R2 producing
the current limiting effects shown in Figure 5. This internal limiting lasts only as long as the input voltage is below
the V
T
of Q2.
When the input voltage exceeds the negative supply voltage, normal operation is affected and output voltage
states may not be correct. Also, the isolation between channels of multiple devices (duals and quads) can be
severely affected. External current limiting must be used since this current is directly shunted by D1 and D2,
and no internal limiting is achieved. If normal output voltage states are required, an external input voltage clamp
is required (see Figure 7).
TLC374, TLC374Q, TLC374Y
LinCMOS QUADRUPLE DIFFERENTIAL COMPARATORS
SLCS118C NOVEMBER 1983 REVISED MARCH 1999
12
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
Figure 5
3
2
1
0
4
5
6
7
8
II Input Current mA
I
I
INPUT CURRENT
vs
INPUT VOLTAGE
V
I
Input Voltage V
V
DD
V
DD
+4 V
DD
+8 V
DD
+12
T
A
= 25°C
The dashed line identifies an area of operation where some
degradation of parametric performance may be experienced.
Figure 6
3
2
1
0
4
5
6
7
8
II Input Current mA
I
I
INPUT CURRENT
vs
INPUT VOLTAGE
V
I
Input Voltage V
V
DD
0.3 V
DD
0.5 V
DD
0.7 V
DD
0.9
T
A
= 25°C
9
10
The dashed line identifies an area of operation where some
degradation of parametric performance may be experienced.
See Note A
5 mA
+
R
L
V
DD
1/4
TLC374
R
L
V
REF
V
I
+V
I
V
DD
0.3 V
R
I
=
Positive Voltage Input Current Limit:
5 mA
V
I
V
DD
(0.3 V)
R
I
=
Negative Voltage Input Current Limit:
NOTE A: If the correct output state is required when the negative input exceeds V
SS
, a Schotty clamp is required.
Figure 7. Typical Input Current-Limiting Configuration for a LinCMOS Comparator
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