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TE28F800C3BA90

Part # TE28F800C3BA90
Description NOR, Flash 512K x 16 48PinTSSOP
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Intel
£
Advanced+ Boot Block Flash Memory (C3)
Datasheet 19
4.0 Modes of Operation
4.1 Read Mode
The flash memory has four read modes (read array, read identifier, read status, and CFI query), and
two write modes (program and erase). Three additional modes (erase suspend to program, erase
suspend to read, and program suspend to read) are available only during suspended operations.
Table 7, “Command Bus Operations” on page 24 and Table 8, “Command Codes and
Descriptions”onpage25summarize the commands used to reach these modes. Appendix A,
“Write State Machine States” on page 50 is a comprehensive chart showing the state transitions.
4.1.1 Read Array
When RP# transitions from V
IL
(reset) to V
IH
, the device defaults to read-array mode and will
respond to the read-control inputs (CE#, address inputs, and OE#) without any additional CUI
commands.
When the device is in read array mode, four control signals control data output.
WE# must be logic high (V
IH
)
CE# must be logic low (V
IL
)
OE# must be logic low (V
IL
)
RP#mustbelogichigh(V
IH
)
In addition, the address of the desired location must be applied to the address pins. If the device is
not in read-array mode, as would be the case after a Program or Erase operation, the Read Array
command (0xFF) must be issued to the CUI before array reads can occur.
4.1.2 Read Identifier
The read-identifier mode outputs three types of information: the manufacturer/device identifier, the
block locking status, and the protection register. The device is switched to this mode by issuing the
Read Identifier command (0x90). Once in this mode, read cycles from addresses shown in Table 6
retrieve the specified information. To return to read-array mode, issue the Read Array command
(0xFF).
Intel
£
Advanced+ Boot Block Flash Memory (C3)
20 Datasheet
4.1.3 CFI Query
The CFI query mode outputs Common Flash Interface (CFI) data after issuing the Read Query
Command (0x98). The CFI data structure contains information such as block size, density,
command set, and electrical specifications. Once in this mode, read cycles from addresses shown in
Appendix C, “Common Flash Interface,” retrieve the specified information. To return to read-array
mode, issue the Read Array command (0xFF).
4.1.4 Read Status Register
The status register indicates the status of device operations, and the success/failure of that
operation. The Read Status Register (0x70) command causes subsequent reads to output data from
the status register until another command is issued. To return to reading from the array, issue a
Read Array (0xFF) command.
The status-register bits are output on DQ[7:0]. The upper byte, DQ[15:8], outputs 0x00 when a
Read Status Register command is issued.
Table 6. Device Identification Codes
Item
Address
1
Data Description
Base Offset
Manufacturer ID Block 0x00 0x0089
Device ID Block 0x01
0x88C0 8-Mbit Top Boot Device
0x88C1 8-Mbit Bottom Boot Device
0x88C2 16-Mbit Top Boot Device
0x88C3 16-Mbit Bottom Boot Device
0x88C4 32-Mbit Top Boot Device
0x88C5 32-Mbit Bottom Boot Device
0x88CC 64-Mbit Top Boot Device
0x88CD 64-Mbit Bottom Boot Device
Block Lock Status
2
Block 0x02
DQ0 = 0b0 Block is unlocked
DQ0 = 0b1 Block is locked
Block Lock-Down Status
2
Block 0x02
DQ1 = 0b0 Block is not locked-down
DQ1 = 0b1 Block is locked down
Protection Register Lock Status Block 0x80 Lock Data
Protection Register Block
0x81 -
0x88
Register Data
Multiple reads required to read
the entire 128-bit Protection
Register.
NOTES:
1. The address is constructed from a base address plus an offset. For example, to read the Block Lock Status
for block number 38 in a bottom boot device, set the address to 0x0F8000 plus the
offset (0x02), i.e.
0x0F8002. Then examine DQ0 of the data to determine if the block is locked.
2. See Section 5.2, “Reading Block-Lock Status” on page 28 for valid lock status.
Intel
£
Advanced+ Boot Block Flash Memory (C3)
Datasheet 21
The contents of the status register are latched on the falling edge of OE# or CE# (whichever occurs
last) which prevents possible bus errors that might occur if Status Register contents change while
being read. CE# or OE# must be toggled with each subsequent status read, or the Status Register
will not indicate completion of a Program or Erase operation.
When the WSM is active, SR[7] will indicate the status of the WSM; the remaining bits in the
status register indicate whether the WSM was successful in performing the preferred operation (see
Table 9, “Status Register Bit Definition” on page 26).
4.1.4.1 Clear Status Register
The WSM can set Status Register bits 1 through 7 and can clear bits 2, 6, and 7; but, the WSM
cannot clear Status Register bits 1, 3, 4 or 5. Because bits 1, 3, 4, and 5 indicate various error
conditions, these bits can be cleared only through the Clear Status Register (0x50) command. By
allowing the system software to control the resetting of these bits, several operations may be
performed (such as cumulatively programming several addresses or erasing multiple blocks in
sequence) before reading the status register to determine if an error occurred during that series.
Clear the status register before beginning another command or sequence. The Read Array
command must be issued before data can be read from the memory array. Resetting the device also
clears the Status Register.
4.2 Program Mode
Programming is executed using a two-write cycle sequence. The Program Setup command (0x40)
is issued to the CUI followed by a second write which specifies the address and data to be
programmed. The WSM will execute a sequence of internally timed events to program preferred
bits of the addressed location, then verify the bits are sufficiently programmed. Programming the
memory results in specific bits within an address location being changed to a “0.” If users attempt
to program “1”s, the memory cell contents do not change and no error occurs.
The Status Register indicates programming status. While the program sequence executes, status bit
7 is “0.” The status register can be polled by toggling either CE# or OE#. While programming, the
only valid commands are Read Status Register, Program Suspend, and Program Resume.
When programming is complete, the program-status bits should be checked. If the programming
operation was unsuccessful, bit SR[4] of the Status Register is set to indicate a program failure. If
SR[3] is set, then V
PP
was not within acceptable limits, and the WSM did not execute the program
command. If SR[1] is set, a program operation was attempted on a locked block and the operation
was aborted.
The status register should be cleared before attempting the next operation. Any CUI instruction can
follow after programming is completed; however, to prevent inadvertent status-register reads, be
sure to reset the CUI to read-array mode.
4.2.1 12-Volt Production Programming
When V
PP
is between 1.65 V and 3.6 V, all program and erase current is drawn through the VCC
pin. Note that if V
PP
is driven by a logic signal, V
IH
min = 1.65 V. That is, V
PP
must remain above
1.65 V to perform in-system flash modifications. When V
PP
is connected to a 12 V power supply,
the device draws program and erase current directly from the VPP pin. This eliminates the need for
an external switching transistor to control V
PP
. Figure 7 on page 31 shows examples of how the
flash power supplies can be configured for various usage models.
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