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TE28F800C3BA90

Part # TE28F800C3BA90
Description NOR, Flash 512K x 16 48PinTSSOP
Category IC
Availability In Stock
Qty 375
Qty Price
1 - 78 $0.87249
79 - 157 $0.69403
158 - 236 $0.65437
237 - 315 $0.60810
316 + $0.54200
Manufacturer Available Qty
INTEL
Date Code: 0015
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INTEL
Date Code: 0309
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Date Code: 0013
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Intel
£
Advanced+ Boot Block Flash Memory (C3)
16 Datasheet
Table 4. Bottom Boot Memory Map
Size
(KW)
Blk
8-Mbit
Memory
Addressing
(HEX)
Size
(KW)
Blk
16-Mbit
Memory
Addressing
(HEX)
Size
(KW)
Blk
32-Mbit
Memory
Addressing
(HEX)
Size
(KW)
Blk
64-Mbit Memory
Addressing
(HEX)
32 22 78000-7FFFF
32 38 F8000-FFFFF 32 70 1F8000-1FFFFF 32 134 3F8000-3FFFFF
32 21 70000-77FFF
32 37 F0000-F7FFF 32 69 1F0000-1F7FFF 32 133 3F0000-3F7FFF
32 20 68000-6FFFF
32 36 E8000-EFFFF 32 68 1E8000-1EFFFF 32 132 3E8000-3EFFFF
32 19 60000-67FFF
32 35 E0000-E7FFF 32 67 1E0000-1E7FFF 32 131 3E0000-3E7FFF
... ... ...
... ... ... ... ... ... . ... ...
32 10 18000-1FFFF
32 10 18000-1FFFF 32 10 18000-1FFFF 32 10 18000-1FFFF
32 9 10000-17FFF
32 9 10000-17FFF 32 9 10000-17FFF 32 9 10000-17FFF
32 8 08000-0FFFF
32 8 08000-0FFFF 32 8 08000-0FFFF 32 8 08000-0FFFF
4 7 07000-07FFF
4 7 07000-07FFF 4 7 07000-07FFF 4 7 07000-07FFF
4 6 06000-06FFF
4 6 06000-06FFF 4 6 06000-06FFF 4 6 06000-06FFF
4 5 05000-05FFF
4 5 05000-05FFF 4 5 05000-05FFF 4 5 05000-05FFF
4 4 04000-04FFF
4 4 04000-04FFF 4 4 04000-04FFF 4 4 04000-04FFF
4 3 03000-03FFF
4 3 03000-03FFF 4 3 03000-03FFF 4 3 03000-03FFF
4 2 02000-02FFF
4 2 02000-02FFF 4 2 02000-02FFF 4 2 02000-02FFF
4 1 01000-01FFF
4 1 01000-01FFF 4 1 01000-01FFF 4 1 01000-01FFF
4 0 00000-00FFF
4 0 00000-00FFF 4 0 00000-00FFF 4 0 00000-00FFF
Intel
£
Advanced+ Boot Block Flash Memory (C3)
Datasheet 17
3.0 Device Operations
The C3 device uses a CUI and automated algorithms to simplify Program and Erase operations.
The CUI allows for 100% CMOS
-level control inputs and fixed power supplies during erasure and
programming.
The internal WSM completely automates Program and Erase operations while the CUI signals the
start of an operation and the status register reports device status. The CUI handles the WE#
interface to the data and address latches, as well as system status requests during WSM operation.
3.1 Bus Operations
The C3 device performs read, program, and erase operations in-system via the local CPU or
microcontroller. Four control pins (CE#, OE#, WE#, and RP#) manage the data flow in and out of
the flash device. Table 5 on page 17 summarizes these bus operations.
3.1.1 Read
When performing a read cycle, CE# and OE# must be asserted; WE# and RP# must be deasserted.
CE# is the device selection control; when active low, it enables the flash memory device. OE# is
the data output control; when low, data is output on DQ[15:0]. See Figure 8, “Read Operation
Waveform on page 42.
3.1.2 Write
A write cycle occurs when both CE# and WE# are low; RP# and OE# are high. Commands are
issued to the Command User Interface (CUI). The CUI does not occupy an addressable memory
location. Address and data are latched on the rising edge of the WE# or CE# pulse, whichever
occurs first. See Figure 9, “Write Operations Waveform” on page 47.
3.1.3 Output Disable
With OE# at a logic-high level (V
IH
), the device outputs are disabled. DQ[15:0] are placed in a
high
-impedance state.
Table 5. Bus Operations
Mode RP# CE# OE# WE# DQ[15:0]
Read V
IH
V
IL
V
IL
V
IH
D
OUT
Write V
IH
V
IL
V
IH
V
IL
D
IN
Output Disable V
IH
V
IL
V
IH
V
IH
High-Z
Standby V
IH
V
IH
X X High-Z
Reset V
IL
XXXHigh-Z
NOTE: X = Don’t Care (V
IL
or V
IH
)
Intel
£
Advanced+ Boot Block Flash Memory (C3)
18 Datasheet
3.1.4 Standby
Deselecting the device by bringing CE# to a logic-high level (V
IH
) places the device in standby
mode, which substantially reduces device power consumption without any latency for subsequent
read accesses. In standby, outputs are placed in a high-impedance state independent of OE#. If
deselected during a Program or Erase operation, the device continues to consume active power
until the Program or Erase operation is complete.
3.1.5 Reset
From read mode, RP# at V
IL
for time t
PLPH
deselects the memory, places output drivers in a high-
impedance state, and turns off all internal circuits. After return from reset, a time t
PHQV
is required
until the initial read-access outputs are valid. A delay (t
PHWL
or t
PHEL
) is required after return from
reset before a write cycle can be initiated. After this wake
-up interval, normal operation is restored.
The CUI resets to read-array mode, the status register is set to 0x80, and all blocks are locked. See
Figure 10, “Reset Operations Waveforms” on page 48.
If RP# is taken low for time t
PLPH
during a Program or Erase operation, the operation will be
aborted and the memory contents at the aborted location (for a program) or block (for an erase) are
no longer valid, since the data may be partially erased or written. The abort process goes through
the following sequence:
1. When RP# goes low, the device shuts down the operation in progress, a process which takes time
t
PLRH
to complete.
2. After time t
PLRH
, the part will either reset to read-array mode (if RP# is asserted during t
PLRH
)or
enter reset mode (if RP# is deasserted after t
PLRH
). See Figure 10, “Reset Operations Waveforms
on page 48.
In both cases, after returning from an aborted operation, the relevant time t
PHQV
or t
PHWL
/t
PHEL
must be observed before a Read or Write operation is initiated, as discussed in the previous
paragraph. However, in this case, these delays are referenced to the end of t
PLRH
rather than when
RP# goes high.
As with any automated device, it is important to assert RP# during a system reset. When the system
comes out of reset, the processor expects to read from the flash memory. Automated flash
memories provide status information when read during program or Block-Erase operations. If a
CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the
flash memory may be providing status information instead of array data. Intel
®
Flash memories
allow proper CPU initialization following a system reset through the use of the RP# input. In this
application, RP# is controlled by the same RESET# signal that resets the system CPU.
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