Intel
£
Advanced+ Boot Block Flash Memory (C3)
Datasheet 39
8.0 AC Characteristics
8.1 AC Read Characteristics
Table 13. Read Operations—8 Mbit Density
#Sym Parameter
Density 8 Mbit
Unit
Product 90 ns 110 ns
V
CC
3.0V–3.6V 2.7V–3.6V 3.0V–3.6V 2.7V–3.6V
Note Min Max Min Max Min Max Min Max
R1 t
AVAV
Read Cycle Time 3,4 80 90 100 110 ns
R2 t
AVQV
Address to Output Delay 3,4 80 90 100 110 ns
R3 t
ELQV
CE# to Output Delay 1,3,4 80 90 100 110 ns
R4 t
GLQV
OE# to Output Delay 1,3,4 30 30 30 30 ns
R5 t
PHQV
RP# to Output Delay 3,4 150 150 150 150 ns
R6 t
ELQX
CE# to Output in Low Z 2,3,4 0 0 0 0 ns
R7 t
GLQX
OE# to Output in Low Z 2,3,4 0 0 0 0 ns
R8 t
EHQZ
CE#toOutputinHighZ 2,3,4 20 20 20 20 ns
R9 t
GHQZ
OE#toOutputinHighZ 2,3,4 20 20 20 20 ns
R10 t
OH
Output Hold from
Address, CE#, or OE#
Change, Whichever
Occurs First
2,3,4 0 0 0 0 ns
NOTES:
1.OE#maybedelayeduptot
ELQV–
t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
2. Sampled, but not 100% tested.
3. See Figure 8, “Read Operation Waveform” on page 42.
4. See Figure 11, “AC Input/Output Reference Waveform” on page 49 for timing measurements and maximum allowable input
slew rate.
