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TE28F800C3BA90

Part # TE28F800C3BA90
Description NOR, Flash 512K x 16 48PinTSSOP
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Intel
£
Advanced+ Boot Block Flash Memory (C3)
34 Datasheet
6.6 Power Supply Decoupling
Flash memory power-switching characteristics require careful device decoupling. System
designers should consider the following three supply current issues:
Standby current levels (I
CCS
)
Read current levels (I
CCR
)
Transient peaks produced by falling and rising edges of CE#.
Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-
line control and proper decoupling capacitor selection will suppress these transient voltage peaks.
Each flash device should have a 0.1 µF ceramic capacitor connected between each V
CC
and GND,
and between its V
PP
and VSS. These high- frequency, inherently low-inductance capacitors should
be placed as close as possible to the package leads.
7.0 Thermal and DC Characteristics
7.1 Absolute Maximum Ratings
Warning: Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended,
and extended exposure beyond the “Operating Conditions” may affect device reliability.
.
NOTICE: Specifications are subject to change without notice. Verify with your local Intel Sales office that you have
the latest datasheet before finalizing a design
.
Parameter Maximum Rating Notes
Extended Operating Temperature
During Read –40 °C to +85 °C
During Block Erase and Program –40 °C to +85 °C
Temperature under Bias –40 °C to +85 °C
Storage Temperature –65 °C to +125 °C
Voltage On Any Pin (except V
CC
and V
PP
) with Respect to GND –0.5 V to +3.7 V 1
V
PP
Voltage (for Block Erase and Program) with Respect to GND 0.5 V to +13.5 V 1,2,3
V
CC
and V
CCQ
Supply Voltage with Respect to GND –0.2 V to +3.6 V
Output Short Circuit Current 100 mA 4
NOTES:
1. Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may
undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is V
CC
+0.5 V which, during transitions, may overshoot to V
CC
+2.0 V for periods <20 ns.
2. Maximum DC voltage on V
PP
may overshoot to +14.0 V for periods <20 ns.
3. V
PP
Program voltage is normally 1.65 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be
done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter
blocks during program/erase. V
PP
may be connected to 12 V for a total of 80 hours maximum.
4. Output shorted for no more than one second. No more than one output shorted at a time.
Intel
£
Advanced+ Boot Block Flash Memory (C3)
Datasheet 35
7.2 Operating Conditions
7.3 DC Current Characteristics
Table 10. Temperature and Voltage Operating Conditions
Symbol Parameter Notes Min Max Units
T
A
Operating Temperature –40 +85 °C
V
CC1
V
CC
Supply Voltage 1, 2 2.7 3.6 Volts
V
CC2
1, 2 3.0 3.6
V
CCQ1
I/O Supply Voltage
12.73.6
VoltsV
CCQ2
1.65 2.5
V
CCQ3
1.8 2.5
V
PP1
Supply Voltage 1 1.65 3.6 Volts
V
PP2
1, 3 11.4 12.6 Volts
Cycling Block Erase Cycling 3 100,000 Cycles
NOTES:
1. V
CC
and V
CCQ
must share the same supply when they are in the V
CC1
range.
2. V
CC
Max = 3.3 V for 0.25µm 32-Mbit devices.
3. Applying V
PP
= 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on
the main blocks and 2500 cycles on the parameter blocks. V
PP
may be connected to 12 V for a total of
80 hours maximum.
Table 11. DC Current Characteristics (Sheet 1 of 3)
Sym Parameter
V
CC
2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V
Unit
Test
Conditions
V
CCQ
2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V
Note Typ Max Typ Max Typ Max
I
LI
Input Load Current 1,2 ± 1 ± 1 ± A
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=V
CCQ
or GND
I
LO
Output Leakage
Current
1,2
± 10 ± 10 ± 10 µA
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=V
CCQ
or GND
Intel
£
Advanced+ Boot Block Flash Memory (C3)
36 Datasheet
I
CCS
V
CC
Standby Current
for 0.13 and 0.18
Micron Product
1 7 15 20 50 150 250 µA
V
CC
=
V
CC
Max
CE# = RP#
=V
CCQ
or during
Program/
Erase
Suspend
WP# =
V
CCQ
or
GND
V
CC
Standby Current
for 0.25 Micron
Product
1 10 25 20 50 150 250 µA
I
CCD
V
CC
Power-Down
Current for 0.13 and
0.18 Micron Product
1,2 7 15 7 20 7 20 µA
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
V
IN
=V
CCQ
or GND
RP# = GND
±0.2V
V
CC
Power-Down
Current for 0.25
Product
1,2 7 25 7 25 7 25 µA
I
CCR
V
CC
Read Current for
0.13 and 0.18 Micron
Product
1,2,3 9 18 8 15 9 15 mA
V
CC
=
V
CC
Max
V
CCQ
=
V
CCQ
Max
OE# = V
IH
,
CE# =V
IL
f=5MHz,
I
OUT
=0 mA
Inputs = V
IL
or V
IH
V
CC
Read Current for
0.25 Micron Product
1,2,3 10 18 8 15 9 15 mA
I
PPD
V
PP
Deep Power-
Down Current
1 0.2 5 0.2 5 0.2 5 µA
RP# = GND
±0.2V
V
PP
V
CC
I
CCW
V
CC
Program Current 1,4
18 55 18 55 18 55 mA
V
PP
=V
PP1,
Program in
Progress
82210301030mA
V
PP
=V
PP2
(12v)
Program in
Progress
I
CCE
V
CC
Erase Current 1,4
16 45 21 45 21 45 mA
V
PP
=V
PP1,
Erase in
Progress
81516451645mA
V
PP
=V
PP2
(12v) ,
Erase in
Progress
I
CCES
/
I
CCWS
V
CC
Erase Suspend
Current for 0.13 and
0.18 Micron Product
1,4,5
7 15 50 200 50 200 µA
CE# = V
IH,
Erase
Suspend in
Progress
V
CC
Erase Suspend
Current for 0.25
Micron Product
10 25 50 200 50 200 µA
Table 11. DC Current Characteristics (Sheet 2 of 3)
Sym Parameter
V
CC
2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V
Unit
Test
Conditions
V
CCQ
2.7V3.6V 1.65V2.5V 1.8V2.5V
Note Typ Max Typ Max Typ Max
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