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TE28F800C3BA90

Part # TE28F800C3BA90
Description NOR, Flash 512K x 16 48PinTSSOP
Category IC
Availability In Stock
Qty 375
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INTEL
Date Code: 0015
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INTEL
Date Code: 0309
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Date Code: 0013
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Date Code: 0312
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

Intel
£
Advanced+ Boot Block Flash Memory (C3)
Datasheet 31
5.6.1 Program Protection
In addition to the flexible block locking, the V
PP
programming voltage can be held low for absolute
hardware write protection of all blocks in the flash device. When V
PP
is below or equal to V
PPLK
,
any Program or Erase operation will result in an error, prompting the corresponding status-register
bit (SR[3]) to be set.
0645_06
NOTE:
1. A resistor can be used if the V
CC
supply can sink adequate current based on resistor value. See AP-657
Designing with the Advanced+ Boot Block Flash Memory Architecture
for details.
Figure 7. Example Power Supply Configurations
V
CC
V
PP
12 V Fast Programming
Absolute Write Protection With V
PP
V
PPLK
System Supply
12 V Supply
10
K
V
CC
V
PP
System Supply
12 V Supply
Low Voltage and 12 V Fast Programming
V
CC
V
PP
System Supply
Prot#
(Logic Signal)
V
CC
V
PP
System Supply
Low-Voltage Programming
Low-Voltage Programming
Absolute Write Protection via Logic Signal
(Note 1)
Intel
£
Advanced+ Boot Block Flash Memory (C3)
32 Datasheet
6.0 Power Consumption
Intel Flash devices have a tiered approach to power savings that can significantly reduce overall
system power consumption. The Automatic Power Savings (APS) feature reduces power
consumption when the device is selected but idle. If CE# is deasserted, the flash enters its standby
mode, where current consumption is even lower. If RP# is deasserted, the flash enter deep power-
down mode for ultra-low current consumption. The combination of these features can minimize
memory power consumption, and therefore, overall system power consumption.
6.1 Active Power (Program/Erase/Read)
With CE# at a logic-low level and RP# at a logic-high level, the device is in the active mode. Refer
to the DC Characteristic tables for I
CC
current values. Active power is the largest contributor to
overall system power consumption. Minimizing the active current could have a profound effect on
system power consumption, especially for battery
-operated devices.
6.2 Automatic Power Savings (APS)
Automatic Power Savings provides low-power operation during read mode. After data is read from
the memory array and the address lines are idle, APS circuitry places the device in a mode where
typical current is comparable to I
CCS
. The flash stays in this static state with outputs valid until a
new location is read.
6.3 Standby Power
When CE# is at a logic-high level (V
IH
), the flash memory is in standby mode, which disables
much of the device’s circuitry and substantially reduces power consumption. Outputs are placed in
ahigh
-impedance state independent of the status of the OE# signal. If CE# transitions to a logic-
high level during Erase or Program operations, the device will continue to perform the operation
and consume corresponding active power until the operation is completed.
System engineers should analyze the breakdown of standby time versus active time, and quantify
the respective power consumption in each mode for their specific application. This approach will
provide a more accurate measure of application
-specific power and energy requirements.
6.4 Deep Power-Down Mode
The deep power-down mode is activated when RP# = V
IL
. During read modes, RP# going low de-
selects the memory and places the outputs in a high-impedance state. Recovery from deep power-
down requires a minimum time of t
PHQV
for Read operations, and t
PHWL
/t
PHEL
for Write
operations.
Intel
£
Advanced+ Boot Block Flash Memory (C3)
Datasheet 33
During program or erase modes, RP# transitioning low will abort the in-progress operation. The
memory contents of the address being programmed or the block being erased are no longer valid as
the data integrity has been compromised by the abort. During deep power-down, all internal
circuits are switched to a low-power savings mode (RP# transitioning to V
IL
or turning off power
to the device clears the status register).
6.5 Power and Reset Considerations
6.5.1 Power-Up/Down Characteristics
In order to prevent any condition that may result in a spurious write or erase operation, it is
recommended to power-up VCC and VCCQ together. Conversely, VCC and VCCQ must power-
down together.
It is also recommended to power-up VPP with or after VCC has reached VCC
min
. Conversely, VPP
must powerdown with or slightly before VCC.
If VCCQ and/or VPP are not connected to the VCC supply, then VCC should attain VCC
min
before
applying VCCQ and VPP. Device inputs should not be driven before supply voltage reaches
VCC
min
.
Power supply transitions should only occur when RP# is low.
6.5.2 RP# Connected to System Reset
The use of RP# during system reset is important with automated program/erase devices since the
system expects to read from the flash memory when it comes out of reset. If a CPU reset occurs
without a flash memory reset, proper CPU initialization will not occur because the flash memory
may be providing status information instead of array data. Intel recommends connecting RP# to the
system CPU RESET# signal to allow proper CPU/flash initialization following system reset.
System designers must guard against spurious writes when V
CC
voltages are above V
LKO
. Because
both WE# and CE# must be low for a command write, driving either signal to V
IH
will inhibit
writes to the device. The CUI architecture provides additional protection since alteration of
memory contents can only occur after successful completion of the two-step command sequences.
The device is also disabled until RP# is brought to V
IH
, regardless of the state of its control inputs.
By holding the device in reset during power-up/down, invalid bus conditions during power-up can
be masked, providing yet another level of memory protection.
6.5.3 V
CC
,V
PP
and RP# Transitions
The CUI latches commands as issued by system software and is not altered by V
PP
or CE#
transitions or WSM actions. Its default state upon power-up, after exit from reset mode or after
V
CC
transitions above V
LKO
(Lockout voltage), is read-array mode.
After any program or Block-Erase operation is complete (even after V
PP
transitions down to
V
PPLK
), the CUI must be reset to read-array mode via the Read Array command if access to the
flash-memory array is desired.
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