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TC4426MJA

Part # TC4426MJA
Description MOSFET DRVR 1.5A 2-OUT LO SIDE - Rail/Tube
Category IC
Availability Out of Stock
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

4-245
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
OUTPUT
INPUT
GND
EFFECTIVE INPUT
C = 12 pF
300 mV
INVERTING
OUTPUTS
NONINVERTING
OUTPUTS
V
DD
TC4426/TC4427/TC4428
4.7V
NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers.
2. TC4428 has one inverting and one noninverting driver.
3. Ground any unused driver input.
FEATURES
High Peak Output Current ............................... 1.5A
Wide Operating Range ..........................4.5V to 18V
High Capacitive Load
Drive Capability ........................ 1000 pF in 25 nsec
Short Delay Time ................................ <40nsec Typ
Consistent Delay Times With Changes in
Supply Voltage
Low Supply Current
— With Logic “1” Input .................................... 4mA
— With Logic “0” Input ................................. 400µA
Low Output Impedance ....................................... 7
Latch-Up Protected: Will Withstand >0.5A
Reverse Current................................. Down to – 5V
Input Will Withstand Negative Inputs
ESD Protected.....................................................4kV
Pinout Same as TC426/TC427/TC428
GENERAL DESCRIPTION
The TC4426/4427/4428 are improved versions of the
earlier TC426/427/428 family of buffer/drivers (with which
they are pin compatible). They will not latch up under any
conditions within their power and voltage ratings. They are
not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4kV of
electrostatic discharge.
As MOSFET drivers, the TC4426/4427/4428 can easily
switch 1000 pF gate capacitances in under 30nsec, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.
Other compatible drivers are the TC4426A/27A/28A.
These drivers have matched input to output leading edge
and falling edge delays, tD1 and tD2, for processing short
duration pulses in the 25 nanoseconds range. They are pin
compatible with the TC4426/27/28.
TC4426/7/8-8 10/21/96
FUNCTIONAL BLOCK DIAGRAM
ORDERING INFORMATION
Temperature
Part No. Package Range
TC4426COA 8-Pin SOIC 0°C to +70°C
TC4426CPA 8-Pin Plastic DIP 0°C to +70°C
TC4426EOA 8-Pin SOIC – 40°C to +85°C
TC4426EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4426MJA 8-Pin CerDIP – 55°C to +125°C
TC4427COA 8-Pin SOIC 0°C to +70°C
TC4427CPA 8-Pin Plastic DIP 0°C to +70°C
TC4427EOA 8-Pin SOIC – 40°C to +85°C
TC4427EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4427MJA 8-Pin CerDIP – 55°C to +125°C
TC4428COA 8-Pin SOIC 0°C to +70°C
TC4428CPA 8-Pin Plastic DIP 0°C to +70°C
TC4428EOA 8-Pin SOIC – 40°C to +85°C
TC4428EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4428MJA 8-Pin CerDIP – 55°C to +125°C
4-246
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B. (V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R
θJ-A
................................................ 150°C/W
CerDIP R
θJ-C
.................................................. 50°C/W
PDIP R
θJ-A
................................................... 125°C/W
PDIP R
θJ-C
..................................................... 42°C/W
SOIC R
θJ-A
................................................... 155°C/W
SOIC R
θJ-C
..................................................... 45°C/W
Operating Temperature Range
C Version ...............................................0°C to +70°C
E Version ..........................................– 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T
A
70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: T
A
= +25°C with 4.5V V
DD
18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
Logic 1 High Input Voltage 2.4 V
V
IL
Logic 0 Low Input Voltage 0.8 V
I
IN
Input Current 0V V
IN
V
DD
– 1 1 µA
Output
V
OH
High Output Voltage V
DD
– 0.025 V
V
OL
Low Output Voltage 0.025 V
R
O
Output Resistance V
DD
= 18V, I
O
= 10 mA 7 10
I
PK
Peak Output Current Duty Cycle 2%, t 30 µsec 1.5 A
I
REV
Latch-Up Protection Duty Cycle 2% > 0.5 A
Withstand Reverse Current t 30 µsec
Switching Time (Note 1)
t
R
Rise Time Figure 1 19 30 nsec
t
F
Fall Time Figure 1 19 30 nsec
t
D1
Delay Time Figure 1 20 30 nsec
t
D2
Delay Time Figure 1 40 50 nsec
Power Supply
I
S
Power Supply Current V
IN
= 3V (Both Inputs) 4.5 mA
V
IN
= 0V (Both Inputs) 0.4 mA
NOTE: 1. Switching times are guaranteed by design.
PIN CONFIGURATIONS
TC4426
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
NC = NO INTERNAL CONNECTION
TC4427
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
TC4428
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2,4 7,5
INVERTING
2,4 7,5
NONINVERTING
V
DD
2
4
DIFFERENTIAL
7
5
V
DD
NOTE: SOIC pinout is identical to DIP.
4-247
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature
range with 4.5V V
DD
18V, unless otherwise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
V
IH
Logic 1 High Input Voltage 2.4 V
V
IL
Logic 0 Low Input Voltage 0.8 V
I
IN
Input Current 0V V
IN
V
DD
– 10 10 µA
Output
V
OH
High Output Voltage V
DD
– 0.025 V
V
OL
Low Output Voltage 0.025 V
R
O
Output Resistance V
DD
= 18V, I
O
= 10 mA 9 12
I
PK
Peak Output Current Duty Cycle 2%, t 300µsec 1.5 A
I
REV
Latch-Up Protection Duty Cycle 2% > 0.5 A
Withstand Reverse Current t 300µsec
Switching Time (Note 1)
t
R
Rise Time Figure 1 40 nsec
t
F
Fall Time Figure 1 40 nsec
t
D1
Delay Time Figure 1 40 nsec
t
D2
Delay Time Figure 1 60 nsec
Power Supply
I
S
Power Supply Current V
IN
= 3V (Both Inputs) 8 mA
V
IN
= 0V (Both Inputs) 0.6
NOTE: 1. Switching times are guaranteed by design.
+5V
INPUT
10%
90%
10%
90%
10%
90%
V
DD
OUTPUT
t
D1
0V
90%
10%
10%
10%
t
F
90%
+5V
INPUT
V
DD
OUTPUT
0V
0V
0V
90%
OUTPUT
INPUT
0.1 µF
C
L
= 1000 pF
4.7 µF
V
DD
= 18V
Inverting Driver
3
2,4
5,7
6
Noninverting Driver
t
F
t
D2
t
R
t
R
t
D1
t
D2
INPUT: 100 kHz, square wave,
t
RISE
= t
FALL
10ns
Figure 1. Switching Time Test Circuit
NOTE: The values on this graph represent the loss seen by both drivers in a package
during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.
200
0
400
600
800
1000
1200
1400
1600
0
10 20
30 40
50 60
70
80 90 100 110 120
AMBIENT TEMPERATURE (°C)
MAX. POWER (mW)
8 Pin DIP
Thermal Derating Curves
8 Pin CerDIP
8 Pin SOIC
Crossover Energy Loss
4
A • sec
186 8 10 12 14 16
8
7
6
5
4
3
2
10
–9
10
–8
9
V
DD
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