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SMJ27C512-25JM

Part # SMJ27C512-25JM
Description EPROM, MICROCIRCUIT, MEMORY,MONOLITHIC SILICON CMOS
Category IC
Availability Out of Stock
Qty 0
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1 + $57.98036



Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

UVEPROM
SMJ27C512
Austin Semiconductor, Inc.
SMJ27512
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
Organized 65,536 x 8
High-reliability MIL-PRF-38535 processing
Single +5V ±10% power supply
Pin-compatible with existing 512K read-only memories (ROMs)
and electrically programmable ROMs (EPROMs)
All inputs/outputs fully TTL compatible
Power-saving CMOS technology
Very high-speed SNAP! Pulse Programming
3-state output buffers
400mV minimum DC noise immunity with standard TTL loads
Latchup immunity of 250mA on all input and output lines
Low power dissipation (CMOS input levels)
PActive - 193mW (MAX)
PStandby - 1.7mW (MAX)
OPTIONS MARKING
Timing
150ns access -15
200ns access -20
250ns access -25
Package(s)
Ceramic DIP (600mils) J No. 110
Operating Temperature Ranges
Military (-55
o
C to +125
o
C) M
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-87648
• MIL-STD-883
512K UVEPROM
UV Erasable Programmable
Read-Only Memory
For more products and information
please visit our web site at
www.austinsemiconductor.com
GENERAL DESCRIPTION
The SMJ27C512 is a set of 65536 by 8-bit (524,288-bit),
ultraviolet (UV) light erasable, electrically programmable
read-only memories. These devices are fabricated using
power-saving CMOS technology for high speed and simple
interface with MOS and bipolar circuits. All inputs
(including program data inputs can be driven by Series 54 TTL
circuits without the use of external pullup resistors. Each
output can drive one Series 54 TTL circuit without external
resistors. The data outputs are 3-state for connecting
multiple devices to a common bus. The SMJ27C512 is
pin-compatible with existing 28-pin 512K ROMs and
EPROMs.
Because this EPROM operates from a single 5V supply (in
the read mode), it is ideal for use in microprocessor-based
systems. One other supply (13V) is needed for programming.
All programming signals are TTL level. This device is
programmable by the SNAP! Pulse programming algorithm.
The SNAP! Pulse programming algorithm uses a V
PP
of 13V
and a V
CC
of 6.5V for a nominal programming time of seven
seconds. For programming outside the system, existing
EPROM programmers can be used. Locations may be
programmed singly, in blocks, or at random.
28-Pin DIP (J) 600-Mils
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
Vcc
A14
A13
A8
A9
A11
G\/V
PP
A10
E\
DQ7
DQ6
DQ5
DQ4
DQ3
Pin Name Function
A0 - A15 Address Inputs
DA0-DQ7 Inputs (programming)/Outputs
E\ Chip Enable/Power Down
GND Ground
G\ /V
PP
Output Enable/13V Programming
V
CC
5V Power Supply
UVEPROM
SMJ27C512
Austin Semiconductor, Inc.
SMJ27512
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
FUNCTIONAL BLOCK DIAGRAM*
OPERATION
The seven modes of operation for the SMJ27C512 are listed in Table 1. The read mode requires a single 5V supply. All
inputs are TTL level except for V
PP
during programming (13V for SNAP! Pulse), and 12V on A9 for signature mode.
TABLE 1. OPERATION MODES
* X can be V
IL
or V
IH
A0
A1
A2
A3
A4
A5 DQ0
A6 DQ1
A7 DQ2
A8 DQ3
A9 DQ4
A10 DQ5
A11 DQ6
A12 DQ7
A13
A14
A15
E\
G\ /V
PP
&
10
[PWR DWN]
9
8
7
6
5
4
3
25
24
21
23
2
26
27
1
20
22
EN
A
A
A
A
A
A
A
A
11
12
13
15
16
17
18
19
EPROM 65,536 x 8
0
15
A
0
65,535
READ
OUTPUT
DISABLE
STANDBY PROGRAMMING VERIFY
PROGRAM
INHIBIT
E\ (20)
V
IL
V
IL
V
IH
V
IL
V
IL
V
IH
G\ /V
PP
(22) V
IL
V
IH
X
V
PP
V
IL
V
PP
V
CC
(28) V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
A9 (24) X X X X X X
V
ID
V
ID
A0 (10) X X X X X X
V
IL
V
IH
MFG DEVICE
97h 85h
Data In Data Out High-Z
CODE
FUNCTION
(PINS)
SIGNATURE MODE
MODE*
DQ0-DQ7
(11-13, 15-19)
V
CC
V
IL
V
IL
Data Out High-Z High-Z
* This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
UVEPROM
SMJ27C512
Austin Semiconductor, Inc.
SMJ27512
Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
READ/OUTPUT DISABLE
When the outputs of two or more SMJ27C512 are connected
in parallel on the same bus, the output of any particular device
in the circuit can be read with no interference from
competing outputs of the other devices. To read the output of
the selected SMJ27C512, a low-level signal is applied to the
E\ and G\ /V
PP
. All other devices in the circuit should have
their outputs disabled by applying a high-level signal to one of
these pins. Output data is accessed at pins DQ0 through DQ7.
LATCHUP IMMUNITY
Latchup immunity on the SMJ27C512 is a minimum of 250mA
on all inputs and outputs. This feature provides latchup
immunity beyond any potential transients at the printed
circuit board level when the EPROM is interfaced to
industry-standard TTL or MOS logic devices. Input/output
layout approach controls latchup without compromising
performance or packing density.
POWER DOWN
Active I
CC
supply current can be reduced from 35mA to
500µA(TTL-level inputs) or 300µA (CMOS-level inputs) by
applying a high TTL/CMOS signal to the E\ pin. In this mode
all outputs are in the high-impedance state.
ERASURE
Before programming, the SMJ27512 is erased by exposing
the chip through the transparent lid to a high-intensity ultra-
violet (UV) light (wavelength 2537 Å). EPROM erasure
before programming is necessary to assure that all bits are in
the logic-high state. Logic lows are programmed into the
desired locations. A programmed logic low can be erased
only by ultraviolet light. The recommended minimum
exposure dose (UV intensity x exposure time) is 15 W
.
s/cm
2
.
A typical 12mW/cm
2
, filterless UV lamp erases the device in
21 minutes. The lamp should be located about 2.5cm above
the chip during erasure. After erasure, all bits are in the high
state. It should be noted that normal ambient light contains
the correct wavelength for erasure; therefore, when using
the SMJ27C512, the window should be covered with an opaque
label.
SNAP! PULSE PROGRAMMING
The SMJ27C512 is programmed using the SNAP! Pulse
programming algorithm as illustrated by the flowchart in
Figure 1. This algorithm programs in a nominal time of seven
seconds. Actual programming time varies as a function of the
programmer used.
Data is presented in parallel (eight bits) on pins DQ0 to DQ7.
Once addresses and data are stable, E\ is pulsed. The SNAP!
Pulse programming algorithm uses an initial pulse of 100µs
followed by a byte verification to determine when the addressed
byte has been successfully programmed. Up to ten 100µs
pulses per byte are provided before a failure is recognized.
The programming mode is achieved when G\ /V
PP
= 13V,
V
CC
= 6.5V, and E\ = V
IL
. More than one device can be
programmed when the devices are connected in parallel.
Locations can be programmed in any order. When the SNAP!
Pulse programming routine is complete, all bits are verified
with V
CC
= 5V, G\ /V
PP
= V
IL
, and E\ = V
IL
.
PROGRAM INHIBIT
Programming can be inhibited by maintaining high level
input on E\.
PROGRAM VERIFY
Programmed bits can be verified with G\ /V
PP
and E\ = V
IL
.
SIGNATURE MODE
The signature mode provides access to a binary code
identifying the manufacturer and device type. This mode is
activated when A9 (terminal 24) is forced to 12V ±0.5V. Two
identifier bytes are accessed by A0 (terminal 10); i.e.,
A0 = V
IL
accesses the manufacturer code, which is output on
DQ0-DQ7; A0 = V
IH
accesses the device code, which is also
output on DQ0-DQ7. All other addresses must be held at V
IL
.
Each byte possesses odd parity on bit DQ7. The
manufacturer code for these devices is 97h and the device
code is 85h.
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