Specifications subject to change without notice.
•
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Typical Performance @ 25°C
Guaranteed Characteristics Typical
0
°
°°
°
to 50
°
°°
°
C -54
°
°°
°
to +85
°
°°
°
C
Frequency
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @ 15 Volts (max.)
Absolute Maximum Ratings
Storage Temperature
Max. Case Temperature
Max. DC Voltage
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3
µ
sec max.)
“S” Series Burn-in Temperature (Case)
Thermal Data: V
cc
= 15 Vdc
Thermal Resistance
θ
jc
Transistor Power Dissipation P
d
Junction Temperature Rise Above Case T
jc
Outline Drawings
Package TO-8 Surface Mount SMA Connectorized
Figure
Model
· WIDE BANDWIDTH
· HIGH GAIN 17.5 dB (TYP.)
· LOW NOISE: 4.1 dB (TYP.)
· GaAs FET DESIGN
1000 TO 4000 MHz
CASCADABLE AMPLIFIER
Specifications (Rev. Date: 1/01)*
* Measured in a 50-ohm system at +5 Vdc Nominal. Subject to change without notice.
