Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems
SD-SST210/214
N-CHANNEL LATERAL
DMOS SWITCH
Product Summary
Features Benefits Applications
• Ultra-High Speed Switching—t
ON
: 1 ns • High-Speed System Performance • Fast Analog Switch
• Ultra-Low Reverse Capacitance: 0.2 pF • Low Insertion Loss at High Frequencies • Fast Sample-and-Holds
• Low Guaranteed r
DS
@5 V • Low Transfer Signal Loss • Pixel-Rate Switching
• Low Turn-On Threshold Voltage • Simple Driver Requirement • DAC Deglitchers
• N-Channel Enhancement Mode • Single Supply Operation • High-Speed Driver
Description
The SD210DE/214DE are enhancement-mode MOSFETs
designed for high speed low-glitch switching in audio, video,
and high-frequency applications. The SD214DE is normally used
for ±10-V analog switching. These MOSFETs utilize lateral
construction to achieve low capacitance and ultra-fast switching
speeds. These MOSFETs do not have a gate protection Zener
diode which results in lower gate leakage and ± voltage capability
from gate to substrate. A poly-silicon gate is featured for
manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
Zener protected—SD211DE/SST211 series.
Absolute Maximum Ratings (T
A
= 25
0
C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V
Gate-Substrate Voltage ......................................................................... ± 30 V
Drain-Source Voltage (SD210DE) ....................................... 30 V
(SD214DE) ....................................... 20 V
Source-Drain Voltage (SD210DE) ....................................... 10 V
(SD214DE) ....................................... 20 V
Drain-Substrate Voltage (SD210DE) ....................................... 30 V
(SD214DE) ....................................... 25 V
Source-Substrate Voltage (SD210DE) ....................................... 15 V
(SD214DE) ....................................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) ............................. 300
0
C
Storage Temperature .................................................................... -65 to 150
0
C
Operating Junction Temperature ................................................. -55 to 125
0
C
Power Dissipation
a
.................................................................................................................................... 300 mW
Notes:
a. Derate 3 mW/
0
C above 25
0
C
Part Number V
(BR)DS
Min(V) V
GS(th)
Max (V)
SD210DE
SD214DE
SST210
SST214
30
20
30
20
1.5
1.5
1.5
1.5
r
DS(on)
Max(Ω) C
rss
Max (pF)
45 @ V
GS
= 10V
45 @ V
GS
= 10V
50 @ V
GS
= 10V
50 @ V
GS
= 10V
t
ON
Max (ns)
0.5 2
0.5 2
0.5 2
0.5 2
Top View
SST210 SST214
Top View
SD210DE SD214DE
