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S29GL256N10TFI020

Part # S29GL256N10TFI020
Description NOR Flash Parallel 3.3V 256M-bit 32M x 8/16M x 16 100ns 56
Category IC
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Date Code: 0623
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

May 13, 2004 27631A4 S29GLxxxN MirrorBitTM Flash Family 13
Advance Information
Ordering Information (256 Mb)
The ordering part number is formed by a valid combination of the following:
Notes:
1. Type 0 is standard. Specify other options as required.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading “S29” and packing type designator from ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device.
Consult your local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.
S29GL256N 90 T A I 00 0
PACKING TYPE
0 = Tray (standard; see note 1)
3 = 13” Tape and Reel
MODEL NUMBER (V
IO
range, protection when WP# =V
IL
)
01 = V
IO
= 2.7 to 3.6 V, highest address sector protected
02 = V
IO
= 2.7 to 3.6 V, lowest address sector protected
L
V1 = V
IO
= 1.65 to 1.95 V, highest address sector protected
V2 = V
IO
= 1.65 to 1.95 V, lowest address sector protected
TEMPERATURE RANGE
I = Industrial (–40
°
C to +85
°
C)
PACKAGE MATERIALS SET
A= Standard
F= Pb-free
PACKAGE TYPE
T = Thin Small Outline Package (TSOP) Standard Pinout
F = Fortified Ball Grid Array, 1.0 mm pitch package
SPEED OPTION
80 = 80 ns
90 = 90 ns
10 = 100 ns
DEVICE NUMBER/DESCRIPTION
S29GL256N
3.0 Volt-only, 256 Megabit (16 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBit
TM
process technology
S29GL512N Valid Combinations
Package Description
256 Mb Speed (ns)
Package &
Temperature
Model Number Pack Type
S29GL256N
80, 90
TAI, TFI
FAI, FFI
01, 02
0, 2 (Note 1)
TS056 (Note 2) TSOP
90, 10 V1, V2 LAA064 (Note 3) Fortified BGA
14 S29GLxxxN MirrorBitTM Flash Family 27631A4 May 13, 2004
Advance Information
Ordering Information (128 Mb)
The ordering part number is formed by a valid combination of the following:
Notes:
1. Type 0 is standard. Specify other options as required.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading “S29” and packing type designator from ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device.
Consult your local sales office to confirm availability of specific valid combinations and to
check on newly released combinations.
S29GL128N 90 T A I 00 0
PACKING TYPE
0 = Tray (standard; see note 1)
3 = 13” Tape and Reel
MODEL NUMBER (V
IO
range, protection when WP# =V
IL
)
01 = V
IO
= 2.7 to 3.6 V, highest address sector protected
02 = V
IO
= 2.7 to 3.6 V, lowest address sector protected
L
V1 = V
IO
= 1.65 to 1.95 V, highest address sector protected
V2 = V
IO
= 1.65 to 1.95 V, lowest address sector protected
TEMPERATURE RANGE
I = Industrial (–40
°
C to +85
°
C)
PACKAGE MATERIALS SET
A= Standard
F= Pb-free
PACKAGE TYPE
T = Thin Small Outline Package (TSOP) Standard Pinout
F = Fortified Ball Grid Array, 1.0 mm pitch package
SPEED OPTION
80 = 80 ns
90 = 90 ns
10 = 100 ns
DEVICE NUMBER/DESCRIPTION
S29GL128N
3.0 Volt-only, 512 Megabit (32 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBit
TM
process technology
S29GL512N Valid Combinations
Package Description
128 Mb Speed (ns)
Package &
Temperature
Model Number Pack Type
S29GL128N
80, 90
TAI, TFI
FAI, FFI
01, 02
0, 3 (Note 1)
TS056 (Note 2) TSOP
90, 10 V1, V2 LAA064 (Note 3) Fortified BGA
May 13, 2004 27631A4 S29GLxxxN MirrorBitTM Flash Family 15
Advance Information
Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch
used to store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to
the internal state machine. The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of
these operations in further detail.
Ta b l e 1 . Device Bus Operations
Legend: L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 11.5–12.5 V, V
HH
= 11.5–12.5V, X = Don’t Care, SA = Sector
Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are AMax:A0 in word mode; A
Max
:A-1 in byte mode. Sector addresses are A
Max
:A16 in both modes.
2. If WP# = V
IL
, the first or last sector group remains protected. If WP# = V
IH
, the first or last sector will be
protected or unprotected as determined by the method described in “Write Protect (WP#)”. All sectors are
unprotected when shipped from the factory (The SecSi Sector may be factory protected depending on version
ordered.)
3. D
IN
or D
OUT
as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or
word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ0–DQ15 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only
data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/
O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the
LSB (A-1) address function.
VersatileIO
TM
(V
IO
) Control
The VersatileIO
TM
(V
IO
) control allows the host system to set the voltage levels
that the device generates and tolerates on CE# and DQ I/Os to the same voltage
Operation CE# OE#
WE
# RESET#
WP#/
ACC
Addresses
(Note 2)
DQ0–
DQ7
DQ8–DQ15
BYTE#
= V
IH
BYTE#
= V
IL
Read L L H H X A
IN
D
OUT
D
OUT
DQ8–DQ14
= High-Z,
DQ15 = A-1
Write (Program/Erase) L H L H Note 2 A
IN
(Note 3)
(Note
3)
Accelerated Program L H L H V
HH
A
IN
(Note 3)
(Note
3)
Standby
V
CC
±
0.3 V
XX
V
CC
±
0.3 V
H X High-Z High-Z High-Z
Output Disable L H H H X X High-Z High-Z High-Z
Reset X X X L X X High-Z High-Z High-Z
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