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S29GL256N10TFI020

Part # S29GL256N10TFI020
Description NOR Flash Parallel 3.3V 256M-bit 32M x 8/16M x 16 100ns 56
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

64 S29GLxxxN MirrorBitTM Flash Family 27631A4 May 13, 2004
Advance Information
Figure 2. Program Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming
operation or a Write to Buffer programming operation so that data can be read
from any non-suspended sector. When the Program Suspend command is written
during a programming process, the device halts the program operation within 15
µs maximum (5µs typical) and updates the status bits. Addresses are not re-
quired when writing the Program Suspend command.
After the programming operation has been suspended, the system can read array
data from any non-suspended sector. The Program Suspend command may also
be issued during a programming operation while an erase is suspended. In this
case, data may be read from any addresses not in Erase Suspend or Program
Suspend. If a read is needed from the SecSi Sector area (One-time Program
area), then user must use the proper command sequences to enter and exit this
region. Note that the SecSi Sector autoselect, and CFI functions are unavailable
when program operation is in progress.
The system may also write the autoselect command sequence when the device
is in the Program Suspend mode. The system can read as many autoselect codes
as required. When the device exits the autoselect mode, the device reverts to the
Program Suspend mode, and is ready for another valid operation. See Autoselect
Command Sequence for more information.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note: See Table 12 and Table 13 for program com-
mand sequence.
May 13, 2004 27631A4 S29GLxxxN MirrorBitTM Flash Family 65
Advance Information
After the Program Resume command is written, the device reverts to program-
ming. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard program operation. See Write Op-
eration Status for more information.
The system must write the Program Resume command (address bits are don’t
care) to exit the Program Suspend mode and continue the programming opera-
tion. Further writes of the Resume command are ignored. Another Program
Suspend command can be written after the device has resume programming.
Figure 3. Program Suspend/Program Resume
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 12 and Table 13 show the address and data
requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, the device returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, or DQ2. Refer to the Write Operation
Status section for information on these status bits.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write Program Suspend
Command Sequence
Command is also valid for
Erase-suspended-program
operations
Autoselect and SecSi Sector
read operations are also allowed
Data cannot be read from erase- o
r
program-suspended sectors
Write Program Resume
Command Sequence
Read data as
required
Done
reading?
No
Yes
Write address/data
XXXh/30h
Device reverts to
operation prior to
Program Suspend
Write address/data
XXXh/B0h
Wait 15 µs
66 S29GLxxxN MirrorBitTM Flash Family 27631A4 May 13, 2004
Advance Information
Any commands written during the chip erase operation are ignored, including
erase suspend commands. However, note that a hardware reset immediately
terminates the erase operation. If that occurs, the chip erase command sequence
should be reinitiated once the device has returned to reading array data, to en-
sure data integrity.
Figure 4 illustrates the algorithm for the erase operation. Note that the SecSi
Sector, autoselect, and CFI functions are unavailable when an erase op-
eration in is progress. Refer to the Erase and Program Operations table in the
AC Characteristics section for parameters, and Figure 16 section for timing
diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two addi-
tional unlock cycles are written, and are then followed by the address of the
sector to be erased, and the sector erase command. Table 12 and Table 13 shows
the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Em-
bedded Erase algorithm automatically programs and verifies the entire memory
for an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs occurs.
During the time-out period, additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 µs, otherwise erasure
may begin. Any sector erase address and command following the exceeded time-
out may or may not be accepted. It is recommended that processor interrupts be
disabled during this time to ensure all commands are accepted. The interrupts
can be re-enabled after the last Sector Erase command is written. Any com-
mand other than Sector Erase or Erase Suspend during the time-out
period resets the device to the read mode. Note that the SecSi Sector,
autoselect, and CFI functions are unavailable when an erase operation
in is progress. The system must rewrite the command sequence and any addi-
tional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out
(See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector.
Refer to the Write Operation Status section for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that occurs, the sector erase
command sequence should be reinitiated once the device has returned to reading
array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and
Program Operations table in the AC Characteristics section for parameters, and
Figure 16 section for timing diagrams.
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