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SBOS156B − MARCH 1987 − REVISED APRIL 2008
www.ti.com
3
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, T
A
= −25°C to +85°C. V
S
= ±40V.
At T
A
= +25°C, V
S
= ±40V, and R
L
= 5kΩ, unless otherwise noted.
OPA445BM OPA445AP, AU, ADDA
PARAMETER TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
UNITS
OFFSET VOLTAGE
Input Offset Voltage V
OS
V
CM
= 0, I
O
= 0 ±1 ±3 ±1.5 ±5 mV
vs Temperature V
OS
/dT T
A
= −25°C to +85°C ±10 * µV/°C
vs Power Supply PSRR V
S
= ±10V to ±45V 4 100 ∗ ∗ µV/V
INPUT BIAS CURRENT
(1)
Input Bias Current I
B
V
CM
= 0V ±10 ±50 ∗ ±100 pA
Over Specified Temperature Range ±10 ±20 nA
Input Offset Current I
OS
V
CM
= 0V ±4 ±20 ∗ ±40 pA
Over Specified Temperature Range ±5 ±10 nA
NOISE
Input Voltage Noise Density, f = 1kHz e
n
15 ∗ nV/√Hz
Current Noise Density, f = 1kHz i
n
6 ∗ fA/√Hz
INPUT VOLTAGE RANGE
Common-Mode Voltage Range V
CM
V
S
= ±40V (V−) + 5 (V+) − 5 ∗ ∗ V
Common-Mode Rejection CMRR V
CM
= −35V to +35V 80 95 ∗ ∗ dB
Over Specified Temperature Range 80 * dB
INPUT IMPEDANCE
Differential 10
13
|| 1 ∗ Ω || pF
Common-Mode 10
14
|| 3 ∗ Ω || pF
OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain A
OL
V
O
= −35V to +35V 100 110 ∗ ∗ dB
Over Specified Temperature Range 97 ∗ dB
FREQUENCY RESPONSE
Gain Bandwidth Product GBW 2 ∗ MHz
Slew Rate SR V
O
= 70V
PP
5 15 ∗ ∗ V/µs
Full Power Bandwidth V
O
= 70V
PP
23 70 ∗ ∗ kHz
Rise Time V
O
= ±200mV 100 ∗ ns
Overshoot G = +1, Z
L
= 5kΩ || 50pF 35 ∗ %
Total Harmonic Distortion + Noise THD+N f = 1kHz, V
O
= 3.5Vrms, G = 1 0.0002 ∗ %
f = 1kHz, V
O
= 10Vrms, G = 1 0.00008 ∗ %
OUTPUT
Voltage Output V
O
(V−) + 5 (V+) − 5 ∗ ∗ V
Over Specified Temperature Range (V−) + 5 (V+) − 5 * * V
Current Output I
O
V
O
= ±28V ±15 ∗ mA
Output Resistance, Open Loop R
O
dc 220 ∗ Ω
Short Circuit Current I
SC
±26 ∗ mA
Capacitive Load Drive C
LOAD
See Typical Characteristic
(2)
∗
POWER SUPPLY
Specified Operating Range V
S
±40 ∗ V
Operating Voltage Range ±10 ±45 ∗ ∗ V
Quiescent Current I
Q
I
O
= 0 ±4.2 ±4.7 ∗ ∗ mA
TEMPERATURE RANGE
Specification Range −25 +85 ∗ ∗ °C
Operating Range −55 +125 ∗ ∗ °C
Storage Range −65 +125 −55 +125 °C
Thermal Resistance,
Junction-to-Ambient
q
JA
TO-99 200 °C/W
DIP-8 100 °C/W
SO-8 Surface-Mount 150 °C/W
SO-8 PowerPAD
(3)
52 °C/W
Thermal Resistance, Junction-to-Case
q
JC
SO-8 PowerPAD
(3)
10 °C/W
NOTE
:
∗ Specifications same as OPA445BM.
(1)
High-speed test at T
J
= +25°C.
(2)
See Small-Signal Overshoot vs Load Capacitance in the Typical Characteristics section.
(3)
Test board 1in x 0.5in heat-spreader, 1oz copper.
