OP113/OP213/OP413

Rev. F | Page 4 of 24

E Grade F Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

AUDIO PERFORMANCE

THD + Noise V

= 3 V rms, R

= 2 kΩ,

f = 1 kHz 0.0009 0.0009 %

Voltage Noise Density e

f = 10 Hz 9 9 nV/√Hz

f = 1 kHz 4.7 4.7 nV/√Hz

Current Noise Density i

f = 1 kHz 0.4 0.4 pA/√Hz

Voltage Noise e

p-p 0.1 Hz to 10 Hz 120 120 nV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 0.8 1.2 0.8 1.2 V/μs

Gain Bandwidth Product GBP 3.4 3.4 MHz

Channel Separation V

OUT

= 10 V p-p

= 2 kΩ, f = 1 kHz 105 105 dB

Settling Time t

to 0.01%, 0 V to 10 V step 9 9 μs

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.

Guaranteed specifications, based on characterization data.

@ V

= 5.0 V, T

= 25°C, unless otherwise noted.

Table 2.

E Grade F Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage V

OP113 125 175 μV

−40°C ≤ T

≤ +85°C 175 250 μV

OP213 150 300 μV

−40°C ≤ T

≤ +85°C 225 375 μV

OP413 175 325 μV

−40°C ≤ T

≤ +85°C 250 400 μV

Input Bias Current I

= 0 V, V

OUT

= 2 300 650 650 nA

−40°C ≤ T

≤ +85°C 750 750 nA

Input Offset Current I

= 0 V, V

OUT

= 2

−40°C ≤ T

≤ +85°C 50 50 nA

Input Voltage Range V

0 4 4 V

Common-Mode Rejection CMR 0 V ≤ V

≤ 4 V 93 106 90 dB

0 V ≤ V

≤ 4 V,

−40°C ≤ T

≤ +85°C 90 87 dB

Large-Signal Voltage Gain A

OP113, OP213,

= 600 Ω, 2 kΩ,

0.01 V ≤ V

OUT

≤ 3.9 V 2 2 V/μV

OP413, R

= 600, 2 kΩ,

0.01 V ≤ V

OUT

≤ 3.9 V 1 1 V/μV

Long-Term Offset Voltage

200 350 μV

Offset Voltage Drift

∆V

/∆T 0.2 1.0 1.5 μV/°C

OP113/OP213/OP413

Rev. F | Page 5 of 24

E Grade F Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Unit

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

= 600 kΩ 4.0 4.0 V

= 100 kΩ,

−40°C ≤ T

≤ +85°C 4.1 4.1 V

= 600 Ω,

−40°C ≤ T

≤ +85°C 3.9 3.9 V

Output Voltage Swing Low V

= 600 Ω,

−40°C ≤ T

≤ +85°C 8 8 mV

= 100 kΩ,

−40°C ≤ T

≤ +85°C 8 8 mV

Short-Circuit Limit I

±30 ±30 mA

POWER SUPPLY

Supply Current I

OUT

= 2.0 V, no load 1.6 2.7 2.7 mA

–40°C ≤ T

≤ +85°C 3.0 3.0 mA

AUDIO PERFORMANCE

THD + Noise V

OUT

= 0 dBu, f = 1 kHz 0.001 0.001 %

Voltage Noise Density e

f = 10 Hz 9 9 nV/√Hz

f = 1 kHz 4.7 4.7 nV/√Hz

Current Noise Density i

f = 1 kHz 0.45 0.45 pA/√Hz

Voltage Noise e

p-p 0.1 Hz to 10 Hz 120 120 nV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 0.6 0.9 0.6 V/μs

Gain Bandwidth Product GBP 3.5 3.5 MHz

Settling Time t

to 0.01%, 2 V step 5.8 5.8 μs

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.

Guaranteed specifications, based on characterization data.

OP113/OP213/OP413

Rev. F | Page 6 of 24

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter Rating

Supply Voltage ±18 V

Input Voltage ±18 V

Differential Input Voltage ±10 V

Output Short-Circuit Duration to GND Indefinite

Storage Temperature Range −65°C to +150°C

Operating Temperature Range −40°C to +85°C

Junction Temperature Range −65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) 300°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

Table 4. Thermal Resistance

Package Type θ

Unit

8-Lead PDIP (P) 103 43 °C/W

8-Lead SOIC_N (S) 158 43 °C/W

16-Lead SOIC_W (S) 92 27 °C/W

ESD CAUTION

Part #	OP213ESZ
Description	OP AMP DUAL GP 18V/36V 8SOICN - Rail/Tube
Category	IC
Availability	Out of Stock
Qty	0

OP213ESZ

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