NTE478
Silicon NPN Transistor
RF Power Output, P
O
= 100W @ 175MHz
Description:
The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF commu-
nications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating
conditions, and is internally input matched to optimize power gain and efficiency over the band.
Features:
D Designed for VHF Military and Commercial Equipment
D 100W Min with Greater than 6.0dB Gain
D Withstands Infinite VSWR under Operating Conditions
D Low Intermodulation Distortion (–32dB)
D Diffused Emitter Resistors
Absolute Maximum Ratings: (T
C
= +25°C unless othrwise specified)
Collector–Base Voltage, V
CBO
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Collector Current, I
C
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (At +25°C), P
tot
270W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
65°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristic
: (T
C
= +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 100mA, I
B
= 0, Note 1 18 – – V
V
(BR)CES
I
C
= 100mA, V
BE
= 0, Note 1 36 – – V
Emitter–Base Breakdown Voltage V
(BR)EBO
I
E
= 10mA, i
C
= 0 4 – – V
Collector Cutoff Current I
CBO
V
CB
= 12V, I
E
= 0 – – 10 mA
DC Current Gain h
FE
V
CE
= 6V, I
C
= 5A 10 – –
Note 1. Pulsed through 25mH indicator.
