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NDS9410A

Part # NDS9410A
Description MOSFET N-CH 30V 7.3A 8-SOIC
Category IC
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Technical Document


DISCLAIMER: The information provided herein is solely for informational purposes. Customers must be aware of the suitability of this product for their application, and consider that variable factors such as Manufacturer, Product Category, Date Codes, Pictures and Descriptions may differ from available inventory.

April 2000
2000 Fairchild Semiconductor Corporation
NDS9410A Rev B(W)
NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
Features
7.3 A, 30 V. R
DS(ON)
= 28 m
@ V
GS
= 10 V
R
DS(ON)
= 42 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±
20
V
I
D
Drain Current – Continuous
(Note 1a)
7.3 A
– Pulsed 20
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°
C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°
C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
NDS9410A NDS9410A 13’’ 12mm 2500 units
NDS9410A
NDS9410A Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
µ
A
30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
28
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 2
µ
A
I
GSSF
Gate–Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –20 V V
DS
= 0 V –100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
11.63 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25
°
C
-4.3
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 7.3 A
V
GS
= 10 V, I
D
= 7.3 A, T
J
=125
°
C
V
GS
= 4.5 V, I
D
= 6.3 A
V
GS
= 4.5 V, I
D
= 6.3 A, T
J
=125
°
C
19
30
25
42
28
45
42
75
m
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 20 A
g
FS
Forward Transconductance V
DS
= 15 V, I
D
= 7.3 A 22 S
Dynamic Characteristics
C
iss
Input Capacitance 830 pF
C
oss
Output Capacitance 185 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
80 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 6 12 ns
t
r
Turn–On Rise Time 10 20 ns
t
d(off)
Turn–Off Delay Time 18 32 ns
t
f
Turn–Off Fall Time
V
DD
= 25 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
510ns
Q
g
Total Gate Charge 14 22 nC
Q
gs
Gate–Source Charge 2.7 nC
Q
gd
Gate–Drain Charge
V
DS
= 15 V, I
D
= 2 A,
V
GS
= 10 V
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 2.2 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.2 A
(Note 2)
0.78 1.1 V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
NDS9410A
NDS9410A Rev B(W)
Typical Characteristics
0
5
10
15
20
25
30
00.511.522.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5.0V
4.5V
2.5V
V
GS
= 10V
6.0V
3.0V
3.5V
4.0V
0.5
1
1.5
2
2.5
0 5 10 15 20 25 30
I
D
, DRAIN CURRENT (A)
V
GS
= 3.0V
5.0V
4.5V
4.0V
6.0V
10V
3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 7.3A
V
GS
= 10V
0
0.02
0.04
0.06
0.08
0.1
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 7.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9410A
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