May 1996
NDM3000
3 Phase Brushless Motor Driver
General Description Features
________________________________________________________________________________
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter NDM3000 Units
V
DSS
Drain-Source Voltage (All Types) ± 30 V
V
GSS
Gate-Source Voltage (All Types) ± 20 V
I
D
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 -
Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
± 3.0 A
- Pulsed (Note 1a & 2) ± 10
P
D
Total Power Dissipation (Note 1a)
Q1+Q4 or Q1+Q6 or Q3+Q2 or (Note 1b)
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1c)
2.5 W
1.6
1.4
T
J
,T
STG
Operating and Storage Temperature Range -55 to 150 °C
NDM3000 Rev. E
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
±3.0A, ±30V, 2.5W
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
Q1
Q2
Q5Q3
Q6Q4
1,16
8,9
4,13
11,14
3,6
2
7
5
10
15
12
© 1997 Fairchild Semiconductor Corporation
